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Partno Mfg Dc Qty AvailableDescript
UPA1601NECN/a755avaiPower MOS FET array
UPA1601CXNECN/a26avaiPower MOS FET array
UPA1601GSNECN/a873avaiPower MOS FET array


UPA1601GS ,Power MOS FET arrayapplications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Output Voltage Vomm 30 V Output Peak Vol ..
UPA1602 ,Power MOS FET arrayFEATURES 05 106 0-07 V00 . Direct driving is possible by standard Logic IC or Microcomputer. (4 V ..
UPA1602CX ,Power MOS FET arrayELECTRICAL CHARACTERISTICS (Ta = 25 'Cl CHARACTERISTIC SYMBOL . . . TEST CONDITIONS |DD(ON) V ..
UPA1602GS ,Power MOS FET arrayapplications. Equivalent Circuits (1/7 Circuit) ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Supp ..
UPA1603CX ,Power MOS FET arrayFEATURES 0 Direct driving is possible by standard Logic IC or Microcomputer. (4 V driving is po ..
UPA1640 ,8-circuit power MOSFET array with 2-INPUT AND gateapplications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Supply Voltage VDD —0.5 to +7.0 V Output V ..
UPD44165364F5-E50-EQ1 , 18M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD442000AGU-BB85X-9JH ,2M-bit(256K-word x 8-bit) Low Power SRAMFeatures• 262,144 words by 8 bits organization• Fast access time : 55, 70, 85, 100, 120 ns (MAX.)• ..
UPD442012AGY-BB70X-MJH ,2M-bit(128K-word x 16-bit) Low Power SRAMDATA SHEETMOS INTEGRATED CIRCUITµµµµ PD442012A-X2M-BIT CMOS STATIC RAM128K-WORD BY 16-BITEXTENDED ..
UPD442012AGY-BB85X-MJH ,2M-bit(128K-word x 16-bit) Low Power SRAMFeatures• 131,072 words by 16 bits organization

UPA1601-UPA1601CX-UPA1601GS

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