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Partno Mfg Dc Qty AvailableDescript
UNR511NG0L Panasonic|Panasonic N/a 9000



UNR511T ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UNR5154 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR5213 ,Composite DeviceTransistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUn ..
UNR5215 ,Composite DeviceTransistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUn ..
UNR5216 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UPD424260G5-70-7JF ,CMOS 4M Bit DRAM
UPD42S18165LG5-A70-7JF , 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
UPD431000ACZ-70LL ,1M-bit(128K-word x 8-bit) Low power SRAM
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