UN6112 ,Silicon PNP epitaxial planer transistorFeaturesn–l Costs can be reduced through downsizing of the equipment andreduction of the number of ..
UN6114 ,Silicon PNP epitaxial planer transistorAbsolute Maximum Ratings (Ta=25˚C)nParameter Symbol Ratings UnitCollector to base voltage V –50 VC ..
UN6224 ,Silicon NPN epitaxial planer transistorAbsolute Maximum Ratings (Ta=25˚C)nMT-1 Type PakageParameter Symbol Ratings UnitCollector to base ..
UN7231 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UN8231 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UN8231A ,Composite DeviceAbsolute Maximum Ratings T = 25°Ca+0.10 +0.10Parameter Symbol Rating Unit 0.45 0.45–0.05 –0.051.05 ..
UPD4110-2 ,High-speed line bufferN iirt: ELECTRONICS INC
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36E 1) I EH27525 tl05HAiil7 i? INECE
APPLICATION NOTE "
I4110 ..
UPD41257C-15 , 262144 X 1-BIT DYNAMIC NMOS RAM
UPD41464C-10 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-10.. ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UPD41464C-12 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-80 ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UN6112-UN6114
