| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UCC383TD-3/5 |
UNI |
N/a |
57 |
 |
|
UCC383TD-5 ,3electrical characteristics T = 0°C to 70°C for the UCC383−x series, T = −40°C to 85°C for theA AUCC ..
UCC383TD-ADJ ,3electrical characteristics T = 0°C to 70°C for the UCC383−x series, T = −40°C to 85°C for theA AUCC ..
UCC383TD-ADJ ,3block diagram*5 LEADED VERSION ONLY (ADJ)VINVOUTVPUMPCURRENT LIMITADJ*R24 A/ 7 A CURRENT+REFERENCE+ ..
UCC383TD-ADJ ,3 SLUS ..
UCC383TDKTTT-3 ,3electrical characteristics T = 0°C to 70°C for the UCC383−x series, T = −40°C to 85°C for theA AUCC ..
UPA809T ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLDXYPRELIMINARY DATA SHEETSILICON TRANSISTORμPA809TMICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXI ..
UPA809T-T1 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLDFEATURES PACKAGE DRAWINGS• Low Voltage Operation, Low Phase Distortion (Unit: mm)• Low Noise2.1±0. ..
UPA80C ,Silicon transistor arrayTRANSISTOR ARRAY
““““““ ~ = ‘ ‘ 1 M ’0
FLUORESCENT INDICATOR PANEL DRIVER
PNP-NPN SILICON EP ..
