TYN1225 ,SCRFEATURES
l HIGH SURGE CAPABILITY
I HIGH ON-STATE CURRENT
. HIGH STABILITY AND RELIABILITY
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TYN1225
SCR
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[ijiil](lf)P2(t)DEll,E(f)Wil(W%)S TYN 225 ---> TYN 1225
FEATURES
. HIGH SURGE CAPABILITY
I HIGH ON-STATE CURRENT
. HIGH STABILITY AND RELIABILITY a
DESCRIPTION
The TYN 225 ---> TYN 1025 Family Silicon Con- G
trolled Rectifiers are high performance glass passi- K
vated chips technology.
This general purpose Family Silicon Controlled TO220 AB
Rectifiers is designed for power supply up to (plastic)
400Hz on resistive or inductive load.
ABSOLUTE RATINGS (liniting values)
Symbol Parameter Value Unit
|T(FIMS) RMS on-state current Tc = 95 "C 25 A
(180° conduction angle)
|T(AV) Average on-state current To = 95 I 16 A
(180'' conduction angle, single phase circuit)
ITSM Non repetitive surge peak on-state current tp a 8.3 ms 260 A
(Tl initial = 25''C)
tp = 10 ms 250
tttt 121 value tp = 10 ms 310 A2s
dl/dt Critical rate of rise of on-statty current 100 A/ps
Gate supply : IG = 100 mA diGIdt = 1 Alps
Tstg Storage and operating junction temperature range - 40 to + 150 "C
T] - 40 to ' 125 °c
TI Maximum lead temperature for soldering during 10 s at 4.5 mm 260 “C
from case
Symbol Parameter TYN Unit
225 425 625 825 1025 1225
VDRM Repetitive peak off-state voltage 200 400 600 800 1000 1200 V
VRRM T] = 125 "C
March 1995 1/4
I D 1"3il%l37
Olri%sln Ohh D
TYN 225 ---> TYN 1225
THERMAL RESISTANCES
Symbol Parameter Value Unit
Flth (j-a) Junction to ambient 60 "CAN
Rth (j-c) DC Junction to case for DC 1.3 "C/IN
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM " 10W (tp = 20 us) IFGM = 4A (tp = 20 gs) VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Value Unit
[GT VD=12V (DC) RL=339 Tj=25°C MAX 40 mA
I/GT vD=12v (DC) RL--33t1 Tj=25°C MAX 1.5 v
VGD VD=VDHM HL=3.3k9. Tj=125°C MIN 0.2 V
tgt VD=VDRM IG = 200mA Tj=25°C TYP 2 us
le/dt = 1.5/Ws
IL IG= 1.2 IGT Tj=25°C TYP so mA
IH IT= 100mA gate open Tj=25°C MAX 50 mA
1/TM ITM--. 50A tp= saops Tj=25°C MAX 1.6 V
IDRM VDRM Rated Tj=25°C MAX 0.01 mA
IRRM VRRM Rated Tr.-- 125°C 4
dV/dt Linear slope up to VD=67%VDRM T]: 125°C MIN 500 V/ps
gate open
tq vD=67%anM ITM= 50A VR--- 25V T]: 125°C TYP 70 us
leM/dt=30 Alps dVDhit= 50V/ps
I D '33'123 UDI:SBE TSIN I:
57 SGS-THOMSON
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