TVR1J ,Fast Recovery Diode Silicon Diffused Type TV Applications (fast recovery)TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV
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TVR1B-TVR1J
Fast Recovery Diode Silicon Diffused Type TV Applications (fast recovery)
TVR1B,TVR1G ,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR1B,TVR1G,TVR1J TV Applications (fast recovery) Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V Reverse Recovery Time: trr = 2.0 µs
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) IF � 100 mA, IR � 100 mA
Marking Unit: mm
Weight: 0.3 g (typ.) Lot No.
Color: Silver Month of manufac-ture
January to December are denoted by letter A to L respectively.
Year of manufac-ture
Last decimal digit of the year of manufacture
