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TSHA5203
Infrared emitting diodes
TSHA520.Document Number 81019
www.vishay.com
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
DescriptionThe TSHA520. series are high efficiency infrared
emitting diodes in GaAlAs on GaAlAs technology,
molded in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs tech-
nology these high intensity emitters feature about
70 % radiant power improvement.
Features Extra high radiant power and radiant intensity Suitable for high pulse current operation Standard T-1¾ (∅ 5 mm) package Angle of half intensity ϕ = ± 12° Peak wavelength λp = 875 nm High reliability Good spectral matching to Si photodetectors Lead-free component Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Absolute Maximum RatingsTamb = 25 °C, unless otherwise specified
