TSH690ID ,40MHZ TO 1GHZ AMPLIFIERABSOLUTE MAXIMUM RATINGS Symbol Parameter Value UnitV , V , VSupply Voltage & Bias Voltage 5.5 ..
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TSH690ID
40MHZ TO 1GHZ AMPLIFIER
Supply voltage: 1.5V to 5V
>20 mW adjustable output power 28 dB gain at 450 MHz 21 dB gain at 900 MHz 50 Ω matched input and output Bias pin to adjust the amplification class Power down
DESCRIPTIONThe TSH690 is a wide band RF amplifier, de-
signed in advanced bipolar process. At 450 MHz,
it features 28dB gain and +13.5dBm (20 mW) out-
put power at 3V. At 900 MHz, it features 23 dB
gain and +15.5 dBm (35 mW) output power at 3V.
The pin 8 allows a bias current adjust, setting the
RF output level and the amplifier behaviour. It al-
lows using the TSH690 from the linear A-class
trough the AB-class to power-down mode.
The TSH690 is suited to drive power amplifiers in
cellular phones (GSM, TDMA) for which the
’turn-on time’ is controlled by a voltage ramp.
The more than 20 mW output power makes the
TSH690 dedicated as output stage for 433MHz
and 868 MHz ISM transmitters.
APPLICATIONS 433 MHz and 868 MHz ISM transmitters Telemetering systems Remote controls Cordless Telephones Driver for cellular phones Wide band applications
ORDER CODE
D = Small Outline Package (SO) - also available in Tape & Reel (DT)
PACKAGE
PIN CONNECTIONS (top view)
TSH69040MHz to 1GHz AMPLIFIER
TSH690
SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
OPERATING CONDITIONS
ESD SENSITIVE DEVICE
Handling Precautions Required
TSH690
ELECTRICAL DC CHARACTERISTICSTamb = 25°C, VCC connected to Vbias, ZL = 50Ω (unless otherwise specified)
TSH690 DISSIPATION CONSIDERATIONSIn order to respect the dissipation limitation of the
package, you should consider the following equa-
tion:
with:
Rth(j-a) = junction ambient thermal resistance
Tj (°C) = max. junction temperature (150°C)
Tamb (°C) = ambient temperature
Pd (W) = maximum dissipated power
The respect of this condition forms a safe area on
the following figure:
Figure 1 : Dissipation capability vs T ambient If VBIAS is DC connected to VCC, the operating
temperature can be directly determined without
determining ICC, thanks to the direct reading
curve:
Figure 2 : Maximum Tamb vs VCC
In applications using a duty cycle, the average dis-
sipation is less than in continuous mode. The fol-
lowing figure gives the relation beetween the dis-
sipated power and the duty cycle.
Figure 3 : Dissipation vs Duty cycle
TSH690
ELECTRICAL CHARACTERISTICS AT 450 MHzTamb = 25°C, VCC & Vbias = +2.7V, ZL = 50Ω, f = 450 MHz (unless otherwise specified)
ELECTRICAL CHARACTERISTICS AT 900 MHzTamb = 25°C, VCC & Vbias = +3V, ZL = 50Ω, f = 900 MHz (unless otherwise specified) All min. and max. parameters of this table are garanteed by correlation with 900 MHz tests. All min. and max. parameters of this table are garanteed by test.
TSH690
SCATTERING PARAMETERS MEASUREMENT (Reference waves planes at package leads)
TEST CONDITIONS VCC1, VCC2, Vbias = +2V, Pin = -40dBm, Tamb = 25°C
