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TSAL7200VISHAYN/a10000avaiGaAs/GaAlAs IR Emitting Diode in 鈭?5 mm (T-1戮) Package


TSAL7200 ,GaAs/GaAlAs IR Emitting Diode in 鈭?5 mm (T-1戮) Package Document Number 810124 (5) Rev. 1, 20-May-99– Relative Radiant Powere relI – Relative Radia ..
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TSAL7200
GaAs/GaAlAs IR Emitting Diode in 鈭?5 mm (T-1戮) Package
TSAL7200
Vishay Semiconductors

www.vishay.comDocument Number 81012
GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1 )
Package
Description

TSAL7200 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in a clear plas-
tic package.
In comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
Extra high radiant power and radiant intensity High reliability Low forward voltage Suitable for high pulse current operation Standard T–1 (ø 5 mm) package Angle of half intensity ϕ = ± 17 Peak wavelength p = 940 nm Good spectral matching to Si photodetectors
94 8389
Applications

Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Absolute Maximum Ratings

Tamb = 25C
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