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TSAL4400
GaAs/GaAlAs IR Emitting Diode in 鈭?3 mm (T-1) Package
TSAL4400Document Number 81006
www.vishay.com
GaAs/GaAlAs IR Emitting Diode in ∅ 3 mm (T-1) Package
DescriptionTSAL4400 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear, blue-
grey tinted plastic packages.
In comparison with the standard GaAs on GaAs tech-
nology these emitters achieve about 100 %
power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features Extra high radiant power Low forward voltage Suitable for high pulse current operation Standard T-1 (∅ 3 mm) package Angle of half intensity ϕ = ± 25° Peak wavelength λp = 940 nm High reliability Good spectral matching to Si photodetectors
Absolute Maximum Ratingsamb = 25 °C, unless otherwise specified
Basic CharacteristicsTamb = 25 °C, unless otherwise specified
