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TPDV1240-TPDV840 Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
TPDV1240STMN/a10000avaiALTERNISTORS
TPDV1240ST,STN/a10000avaiALTERNISTORS
TPDV1240STN/a500avaiALTERNISTORS
TPDV840STN/a10000avaiALTERNISTORS


TPDV1240 ,ALTERNISTORS®TPDV640 ---> TPDV1240ALTERNISTORSA2
TPDV1240 ,ALTERNISTORS®TPDV640 ---> TPDV1240ALTERNISTORSA2
TPDV1240 ,ALTERNISTORSFEATURESn High commutation: > 142A/ms (400Hz)n Insulating voltage = 2500V(RMS)G(UL Recognized: EB81 ..
TPDV1240RG ,40A high-voltage TriacsTPDVxx4040 A high voltage Triacs
TPDV1240RG ,40A high-voltage TriacsFeaturesA2■ On-state current (I ): 40 AT(RMS)■ Max. blocking voltage (V /V ): 1200 V DRM RRMG■ Gate ..
TPDV840 ,ALTERNISTORSFEATURESn High commutation: > 142A/ms (400Hz)n Insulating voltage = 2500V(RMS)G(UL Recognized: EB81 ..
TS339CD ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORTS339C,I,MMICROPOWER QUAD CMOS VOLTAGE COMPARATORS ■ EXTREMELY LOW SUPPLY CURRENT : 9μA typ / ..
TS339CDT ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORELECTRICAL CHARACTERISTICS+ -V = 3V, V = 0V, T = 25°C (unless otherwise specified) CC cc ambSy ..
TS339CN ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit+ 1)18 VVSupply Voltage CC2)V±18 Vid Diffe ..
TS339CN ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORTS339C,I,MMICROPOWER QUAD CMOS VOLTAGE COMPARATORS ■ EXTREMELY LOW SUPPLY CURRENT : 9μA typ / ..
TS339ID ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORELECTRICAL CHARACTERISTICS+ -V = 3V, V = 0V, T = 25°C (unless otherwise specified) CC cc ambSy ..
TS339IDT ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit+ 1)18 VVSupply Voltage CC2)V±18 Vid Diffe ..


TPDV1240-TPDV840
ALTERNISTORS
TPDV640 ---> TPDV1240
ALTERNISTORS High commutation:> 142A/ms (400Hz) Insulating voltage= 2500V(RMS)(UL Recognized: EB81734) High voltage capability: VDRM= 1200V
FEATURES

The TPDV640 ---> TPDV1240 usea high perfor-
mance passivated glass alternistor technology.
Featuring very high commutation levels and high
surge current capability,this familyis well adapted power controlon inductive load (motor, trans-
former...)
DESCRIPTION
ABSOLUTE RATINGS
(limiting values)
TPDV640 ---> TPDV1240
GATE CHARACTERISTICS
(maximum values)
PG(AV) =1W PGM= 40W(tp= 20μs) IGM=8A(tp= 20μs) VGM= 16V(tp= 20μs)
THERMAL RESISTANCES
For either polarityof electrodeA2 voltage with referenceto electrodeA1.
ELECTRICAL CHARACTERISTICS
TPDV640 ---> TPDV1240
Fig.3:
RMS on-state current versus case temper-
ature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
Zth/Rth
Fig.4:
Relative variationof thermal impedance
versus pulse duration.
Fig.5:
Relative variationof gate trigger current
and holding current versus junction temperature.
Fig.6:
Non repetitive surge peak on-state current
versus numberof cycles.
Fig.1:
Maximum RMS power dissipation versus
RMS on-state current(F= 50Hz).(Curvesarecut
offby (dI/dt)c limitation)
Fig.2:
Correlation between maximum RMS power
dissipation and maximum allowable temperatures
(Tamb and Tcase)for different thermal resistances
heatsink+ contact.
TPDV640 ---> TPDV1240
Fig.7:
Non repetitive surge peak on-state current
fora sinusoidal pulse with width:t≤ 10ms, and cor-
responding valueofI2t.
Fig.8:
On-state characteristics (maximum values).
Fig.9:
Safe operating area.
TPDV640 ---> TPDV1240
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Epoxy meets UL94,V0 Cooling method:C Recommended torque value:0.8 m.N. Maximum torque value:1 m.N.
OTHER INFORMATION
PACKAGE MECHANICAL DATA

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