TPCM8001-H ,MOSFET TPC SeriesApplications • Small footprint due to small and thin package • High speed switching 0.5541• Small ..
TPCP8001-H ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient R 7 ..
TPCP8002 , TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
TPCP8004 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta=25°C) ＋0.10.28 －0.11 1,2,3 ：SOURCE Characteristics SymbolRating Unit ..
TPCP8005-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) +0.10.28-0.11Characteristic Symbol Rating Unit 1. Source 5. D ..
TPCP8006 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) ＋0.131.12 －0.12 ＋0.131.12 －0.12 Characteristic Symbol Rating U ..
TS2023B , 10 BASE-T ISOLATION TRANSFORMER
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TS2431ACX RF , Adjustable Precision Shunt Regulator
TS2431AILT ,PROGRAMMABLE SHUNT REFERENCETS2431PROGRAMMABLE SHUNT VOLTAGE REFERENCE ■ ADJUSTABLE OUTPUT VOLTAGE2.5 to 24V■ SEVERAL PRE ..
TS2431BILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
TPCM8001-H
MOSFET TPC Series
2004-08-18 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U -MOSIII)
TPCM8001-H High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg =19 nC (typ.) Low drain-source ON resistance: RDS (ON) = 7 mO (typ.) High forward transfer admittance: |Yfs| =36 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C) Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
Weight: g (typ.)
Circuit Configuration 2 3
