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TPCF8B01TOSHIBA ?N/a4000avaiMOSFET TPC Series


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TPCF8B01
MOSFET TPC Series
TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
TPCF8B01

Notebook PC Applications
Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 mÙ (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS = -10 ìA (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to -1.2 V(VDS =-10 V, ID = -200 ìA) Low forward voltage: VFM = 0.46V(typ.)
Maximum Ratings
MOSFET (Ta = 25°C)
Symbol SBD (Ta = 25°C)
Maximum Ratings for MOSFET and SBD (Ta = 25°C)
Unit: mm
Weight: 0.011 g (typ.)
Circuit Configuration
Marking (Note 7)
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