TPCF8105 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless o ..
TPCF8201 ,MOSFET TPC SeriesApplications • Low drain-source ON resistance: R = 38 mΩ (typ.) DS (ON)• High forward transfer a ..
TPCF8301 ,Field Effect TransistorApplications Low drain-source ON resistance: R = 72 mΩ (typ.) DS (ON) High forward transfer ..
TPCF8302 ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnitSingle-device operation R 92.6th (ch-a) (1)Th ..
TPCF8303 ,MOSFET TPC SeriesTPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Noteboo ..
TPCF8304 ,MOSFET TPC SeriesThermal Characteristics Characteristic Symbol MaxUnitSingle-device operation R 92.6th (ch-a) (1)The ..
TS2007 ,3W filter free class D audio power amplifier with fixed gainAbsolute maximum ratingsSymbol Parameter Value Unit(1)V Supply voltage 6VCC(2)V Input voltage GND t ..
TS2012EIJT ,Filter-free stereo 2 x 2.8 W class D audio power amplifierAbsolute maximum ratingsSymbol Parameter Value Unit(1)V Supply voltage 6VCC(2)V Input voltage GND t ..
TS2019LF , 10/100 BASE-TX VOICE OVER IP MAGNETICS MODULES
TS2019M , 10/100 BASE-TX VOICE OVER IP MAGNETICS MODULES
TS2023B , 10 BASE-T ISOLATION TRANSFORMER
TS20P06G , Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers
TPCF8105
Power MOSFET (P-ch single)
TPCF8105
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCF8105TPCF8105TPCF8105TPCF8105
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Lithium-Ion Secondary Batteries Power Management Switches
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = -4.5 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V)
(4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
