TPCF8002 ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristics Symbol MaxUnitThermal resistance, channel to ambient (t = ..
TPCF8101 ,Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) Notebook PC Applications Portable Equipment ApplicationsTPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebo ..
TPCF8102 ,Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) Notebook PC Applications Portable Equipment ApplicationsApplications Low drain-source ON resistance: R = 24 mΩ (typ.) DS (ON) High forward transfer ..
TPCF8104 ,MOSFET TPC Series
TPCF8105 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless o ..
TPCF8201 ,MOSFET TPC SeriesApplications • Low drain-source ON resistance: R = 38 mΩ (typ.) DS (ON)• High forward transfer a ..
TS1874ID ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both I/O Rail to Rail.N. N.C. C. 1 1 8 8 N. N.C. C.The common mode input voltage extends 2 ..
TS1874IDT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSapplications.O Ou utput 1 tput 1 1 1 8 8 VC VCC CAPPLICATIONInv Inve er rt tiing In ng Input 1 put ..
TS1874IN ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSapplications.O Ou utput 1 tput 1 1 1 8 8 VC VCC CAPPLICATIONInv Inve er rt tiing In ng Input 1 put ..
TS1874IPT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, R , C connected to V /2, T = 25°C (unless otherwise spec ..
TS1874IYDT ,1.8V min. voltage supply, micropowerFeaturesTS1871ILT■ Operating range from V = 1.8 to 6 VCCOut V1 5CC+■ Rail-to-rail input and outputV ..
TS1874IYPT ,1.8V min. voltage supply, micropowerElectrical characteristics . . . . . 53 Package information 163.1 SO-8 package informatio ..
TPCF8002
Power MOSFET (N-ch single VDSS≤30V)
TPCF8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS Ⅳ)
TPCF8002 Notebook PC Applications
Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C) Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
This transistor is an electrostatic-sensitive device. Handle with care.
Weight: 0.011 g (typ.)
Circuit Configuration 8 6
1 2 3 5
