TPCA8030-H ,Power MOSFET (N-ch single VDSS≤30V)TPCA8030-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCA8030-H Hi ..
TPCA8030-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2Drain-source volta ..
TPCA8030-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 4.17 ° ..
TPCA8030-H ,Power MOSFET (N-ch single VDSS≤30V)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
TPCA8031-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2Drain-source volta ..
TPCA8036-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 ° ..
TS117PTR , Multifunction Telecom Switch
TS117PTR , Multifunction Telecom Switch
TS117S , Multifunction Telecom Switch
TS117STR , Multifunction Telecom Switch
TS12 ,SENSITIVE & STANDARD(12A SCRs)applications such as overvoltage crowbarprotection, motor control circuits in power toolsand kitche ..
TS120STR , Multifunction Telecom Switches
TPCA8030H-TPCA8030-H
Power MOSFET (N-ch single VDSS≤30V)
TPCA8030-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H)
TPCA8030-H High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.069 g (typ.)
Circuit Configuration 8 6
1 2 3 5
