TPCA8020-H ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Ta = 25°C) 8 50.8±0.1Characteristic Symbol Rating Unit Drain-source volta ..
TPCA8021-H , High Efficiency DC／DC Converter Applications
TPCA8022-H , Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8022-H , Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8024 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) 0.05 S S Characteristics Symbol Rating Unit 41 Drain-source vo ..
TPCA8025 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) S 41 Characteristics Symbol Rating Unit Drain-source voltage V ..
TS1142 , 10/100 BASE-TX TRANSFORMER MODULES
TS117PTR , Multifunction Telecom Switch
TS117PTR , Multifunction Telecom Switch
TS117S , Multifunction Telecom Switch
TS117STR , Multifunction Telecom Switch
TS12 ,SENSITIVE & STANDARD(12A SCRs)applications such as overvoltage crowbarprotection, motor control circuits in power toolsand kitche ..
TPCA8020-H
Power MOSFET (N-ch single 30V<VDSS≤60V)
TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8020-H High-Efficiency DC／DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 3.5 nC (typ.)
Low drain−source ON-resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.066 g (typ.)
Circuit Configuration 8 6
1 2 3 5
