TPCA8011-H ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8011-H ,MOSFET TPC SeriesApplications 0.15±0.05• Small footprint due to small and thin package • High speed switching 41 0 ..
TPCA8014-H ,MOSFET TPC SeriesApplications 0.15±0.05• Small footprint due to small and thin package • High speed switching 1 4 ..
TPCA8016-H ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8016-H ,MOSFET TPC SeriesApplications 0.15±0.05• Small footprint due to small and thin package • High-speed switching 4 0. ..
TPCA8020-H ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Ta = 25°C) 8 50.8±0.1Characteristic Symbol Rating Unit Drain-source volta ..
TS1117BCW33 , 800mA Low Dropout Positive Voltage Regulator
TS1117BCW33 , 800mA Low Dropout Positive Voltage Regulator
TS1117CW , 800mA Low Dropout Positive Voltage Regulator
TS1117CW-18 , 800mA Low Dropout Positive Voltage Regulator
TS1142 , 10/100 BASE-TX TRANSFORMER MODULES
TS117PTR , Multifunction Telecom Switch
TPCA8011-H
MOSFET TPC Series
TPCA801 1-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCA8011-H High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qsw = 11 nC (typ.) Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| = TBD S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta === = 25°C)
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration 8 6
1 2 3 5
