TPCA8010-H ,MOSFET TPC SeriesTPCA8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type( -MOSV) TENTATIVE TPCA8010- ..
TPCA8011-H ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8011-H ,MOSFET TPC SeriesApplications 0.15±0.05• Small footprint due to small and thin package • High speed switching 41 0 ..
TPCA8014-H ,MOSFET TPC SeriesApplications 0.15±0.05• Small footprint due to small and thin package • High speed switching 1 4 ..
TPCA8016-H ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8016-H ,MOSFET TPC SeriesApplications 0.15±0.05• Small footprint due to small and thin package • High-speed switching 4 0. ..
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TPCA8010-H
MOSFET TPC Series
TPCA8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(π-MOSV)
TPCA8010-H High Speed and High Efficiency DC-DC Converters · Small footprint due to small and thin package High speed switching Small gate charge: Qg = 10nC (typ.) Low drain-source ON resistance: RDS (ON) = 380mO (typ.) High forward transfer admittance: |Yfs| = S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C) Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
Weight: 0.08 g (typ.)
Circuit Configuration 2 3
