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TPC8A02-H TOS|TOSHIBA N/a 70 TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications
TPC8A02-H TOSHIBA|TOSHIBA N/a 24000 TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications



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TPC8A03-H TOSHIBA,Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 30 V DSS Drain-gate voltage (R = 20 kΩ) V 30 V GS DGRJE ..
TPC8A02-H , TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications
TPC8A03-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to ambient R 65. ..
TPC8A04-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to ambient R 65. ..
TPC8A05-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to ambient R 65.8 ..
TPC8A06-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to ambient R 65. ..
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