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TPC8302TPCN/a100avaiField Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSVI) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs


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TPC8302
Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSVI) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TPC8302
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 −π−MOSVI)
TPC8302

Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs 2.5 V Gate drive Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 100 mΩ (typ.) High forward transfer admittance: |Yfs| = 5 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement−mode: Vth = −0.5~ −1.1 V (VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C)

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration

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