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TPC8301TOSN/a2884avaiField Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSVI) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs


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TPC8301
Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSVI) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TPC8301
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 −π−MOSVI)
TPC8301

Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 95 mΩ (typ.) High forward transfer admittance : |Yfs| = 4 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Tstg
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration

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