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TPC8113TOSN/a187avaiMOSFET TPC Series
TPC8113N/a1219avaiMOSFET TPC Series


TPC8113 ,MOSFET TPC Series
TPC8113 ,MOSFET TPC Series
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TPC8113
MOSFET TPC Series
TPC8113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8113

Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8 mΩ (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)

Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with
caution.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration
8 6
1 2 3 5
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