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TPC8106-H |TPC8106HTOSN/a2696avaiSILICON P CHANNEL MOS TYPE
TPC8106HN/a22avaiSILICON P CHANNEL MOS TYPE
TPC8106HTOSN/a987avaiSILICON P CHANNEL MOS TYPE
TPC8106HTOSHIBA N/a600avaiSILICON P CHANNEL MOS TYPE
TPC8106-H |TPC8106HTOSHIBAN/a3521avaiSILICON P CHANNEL MOS TYPE
TPC8106-H |TPC8106HT0SHIBAN/a2910avaiSILICON P CHANNEL MOS TYPE


TPC8106-H ,SILICON P CHANNEL MOS TYPE
TPC8106-H ,SILICON P CHANNEL MOS TYPE
TPC8106-H ,SILICON P CHANNEL MOS TYPE
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TPC8106H-TPC8106-H
SILICON P CHANNEL MOS TYPE
TPC8106-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TPC8106−H

High Speed and High Efficiency DC−DC Converters
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 52 nC (typ.) Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 16.6 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.8~ −2.0 V (VDS =− 10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration

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