TPC8066-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8067-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8074 ,Power MOSFET (N-ch single VDSS≤30V)
TPC8075 ,Power MOSFET (N-ch single 30V<VDSS≤60V)
TPC8076 ,Power MOSFET (N-ch single 30V<VDSS≤60V)
TPC8078 ,Power MOSFET (N-ch single 30V<VDSS≤60V)
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1051 , Constant Voltage and Constant Current Controller For Battery Chargers and Adaptors
TS1084CM-3.3 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TPC8066-H
Power MOSFET (N-ch single VDSS≤30V)
TPC8066-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8066-HTPC8066-HTPC8066-HTPC8066-H
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small, thin package
(2) High-speed switching
(3) Small gate charge: QSW = 3.2 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ.) (VGS = 4.5 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
