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TPC6106TOSHIBAN/a6130avaiPower MOSFET (P-ch single)


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TPC6106
Power MOSFET (P-ch single)
TPC6106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
TPC6106

Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −40 V) Enhancement model: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc). Thermal Characteristics
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
Unit: mm
Weight: 0.011 g (typ.)
Circuit Configuration
6 4
1 2 3
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