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TP0610K
P-Channel 60-V (D-S) MOSFET
VISHAY
TP0610K
New Product Vishay Siliconix
P-Channel 60-V (D-S) MOSFET tt (5)
oo, ss't s
ESD Protected
2000 v
APPLICATIONS
q Drivers: Relays, Solenoids, Lamps, Hammers,
Low Offset (Error) Voltage Displays, Memories, Transistors, etc.
q Battery Operated Systems
q Power Supply Converter Circuits
PRODUCT SUMMARY
V(BR)DSS(min) (V) rDS(on) (Q) VGS(th) (V) I0 (mA)
-60 6 @ sz = -10 v -1 to -3.0 -185
FEATURES BENEFITS
. High-Side Switching 0 Ease in Driving Switches
. Low On-Resistance: 6 f2 o
. Low Threshold: -2 V (typ) 0 Low-Voltage Operation
. Fast Swtiching Speed: 20 ns (typ) 0 High-Speed Circuits
q Low Input Capacitance: 20 pF (typ) o Easily Driven 1/Whout Buffer q Solid State Relays
0 Gate-Source ESD Protection
TO-236
(sons)
Top View
Marking Code: 6Kw/l
6K = Part Number Code for TP0610K
w = Week Code
II = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros -60
Gate-Source Voltage VGS i 20
TA = 25''C -185
Continuous Drain Currenta ID
a-- 100°C -115 mA
Pulse Drain Currentb IBM -B00
TA = 25°C 350
Power Dissipation" PD mW
TA = 100°C 140
Maximum Junction-to-Ambienta RthJA 350 "CAN
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
a. Surface mounted on FR4 board.
b. Pulse width limited by maximumjunction temperature.
DocumentNumber: 71411
S-04279-Rev. C, 16-Jul-01
www.vishaycom
TP0610K
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS N/ss = 0 V, ID = -10 pA -60
Gate-Threshold Voltage Vegan) Vos = VGS, ID = -250 pA -1 -3.0
VDs=0V,Vss=ce201/ i10 WA
VDs=0V,VGs=ce10V i200
Gate-Body Leakage IGSS
VDS=0V,VGS=i1O\/,TJ=85°C i500
VDs=0V,VGs=ce5V i100 nA
VDS = -50 V, VGS = 0 V -25
Zero Gate Voltage Drain Current IDSS
VDs=-50 V,VGS= 0V, TJ= 85°C -250
Vros=-10V,Vss=-A.5V -50
On-State Drain Currenta ID(on) mA
VDS = -10 V, VGS = -10 V -600
Vss=-A.5 V, Iro=-25 mA 10
Drain-Source On-Resistancea rns(on) Vas = -1 0 V, ID = -500 mA 6 Q
Vss=-10V, ks---" mA,TJ= 125°C 9
Forward Transconductancea gfs VDS = -10 V, ID = -100 mA 80 ms
Diode Forward Voltagea VSD ls = -200 mA, VGS = 0 V -1.4 V
Dynamic
Total Gate Charge Q9 1.7
Gate-Source Charge Qgs Vrss = -30 V, VGS = -15 V, Irs E -500 mA 0.26 nC
Gate-Drain Charge di 0.46
Input Capacitance Ciss 23
Output Capacitance Cogs Vros = -25 V, vss = 0 V, f= 1 MHz 10 pF
Reverse Transfer Capacitance Crss 5
Switching'
Turn-On Tlme tON VDD = -25 V, RL = 150 Q 20
ID _ -200 mA, VGEN = -10 V ns
Turn-Off Time 10H: Rs = 10 g 35
a. Pulse test: PW S300 ms duty cycle s2%. TPJ060
b. Switching time is essentially independent of operating temperature.
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DocumentNumber: 71411
S-04279-Reu. C, 16-Jul-01
VISHAY
TP0610K
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
I D — Drain Current (A)
rDS(on) — On—Resistance( S2)
V GS — Gate-to-Source Voltage (V)
Output Characteristics
vss = 10 v e,,,.,-"'"
0.8 I /’ "ere'''"' Ty,,.,..
8V ////I
0 6 l/// -
. 'i,(,(?tj'',',',C. - 6 V -
C,,,----'"''-"'"""'"'"
0.4 b3t'
,,,w''''" 5 v -
0.2 /,
0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
16 "ss, VGS = 4.5 v
I VGS = 5 V
,./ VGS = 10 v
0 200 400 600 800 1000
ID - Drain Current (mA)
Gate Charge
|D=I500mAI pd"
VDS=30V
i/VDS=48V
0.0 0.3 0.6 0.9 1.2 1.5 1.8
09 - Total Gate Charge (nC)
rDS(on) — On—Resistance( 52)
C — Capacitance (pF) | D — Drain Current(mA)
(Normalized)
Transfer Characteristics
To = -55''C
s, 25''C
0 2 4 6 8 10
Vss - Gate-to-Source Voltage (V)
Capacitance
VGS = 0 V
y Ciss
16 't N
's Crss
O 5 IO 15 20 25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS= 10V@ 500
v,,,-'''''''
-25 0 25 50 75 100 125 150
T J - Junction Temperature (°C)
DocumentNumber: 71411
S-04279-Rev. C, 16-Jul-01
www.vishay.com
TP0610K
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
1000 10
VGS = 0 V
8 b = 500 mA -
'ir." 100 V
ti5 8 6
's T J = 125''C o5.
fl t 4 ' 's,
I 10 \TJ=25°C . Iro=200mA "s-......
T J = -551 [l:]
0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient
ID = 250 11A /" 2.5
g 0.2 / g l
g www'" v (
(ll, 0.1 / lg 1.5
E " t l
o -01) lt,
> 1 T 25°C
-0 1 ,/ "s, A -
Ah2 ho a'....
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
T J - Junction Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
104 1o-3 1(r2
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T,
2. Per Unit Base = RmJA = 350°CIW
3. TJM - TA = PoMirtruA(t)
4. Surface Mounted
10 100 600
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DocumentNumber: 71411
S-04279-Reu. C, 16-Jul-01
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