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TP0101TS
Enhancement-Mode MOSFET Transistors
VISHAY
TP0101TITS
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
In (A)
VDs (V) riosion) (Q) TP0101T TP0101TS
0.65 @ VGS = -A.5 v Ah6 -1.0
-20 0.85 @ VGS = -2.5 v AJ.5 -0.9
FEATURES BENEFITS
o High-Side Switching q Ease in Driving Switches
q Low On-Resistance: 0.45 Q q Low Offset (Error) Voltage
q Low Threshold: 0.9V (typ) q Low-Voltage Operation
q Fast Switching Speed: 32 ns . High-Speed Circuits
o 2.5-V or Lower Operation .
Low Battery Voltage Operation
T0-236
(SOT-23)
Top View
APPLICATIONS
q Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
q Battery Operated Systems, DC/DC Converters
q Power Supply Converter Circuits
Marking Code:
TP0101T: POwll
TP0101TS: PSw/l
w = Week Code
I= Lot Traceability
o Load/Power Switching-Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol TP0101T TP0101TS° Unit
Drain-Source Voltage VDS -20 -20
Gate-Source Voltage VGS i 8 k 8
TA-- 25°C -0.6 -1.0
Continuous Drain Current (To = 150°C)b ID
TA-- 70°C Ah48 -0.8
Pulsed Drain Currenta lau -3 -3
Continuous Source Current (Diode Conduction)b Is -0.6 -1.0
TA-- 25°C 0.35 1.0
Power Dissipationb Pro W
TA-- 70°C 0.22 0.65
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol TP0101T TP0101TS° Unit
Thermal Resistance, Junction-to-Ambient' RthJA 357 125 “CIW
a. Pulse width limited by maximumjunction temperature.
b. Surface Mounted on FR4 Board, t s 10 sec.
C. Copper lead frame.
DocumentNumber: 70229
S-04279-Rev. D, 16-Jul-01
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TP0101TITS
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -10 WA -20 -26
Gate-Threshold Voltage Vegan) VDS = VGS, ID = -50 “A -0.5 Al.9 -1.5
Gate-Body Leakage less VDS = O V, VGS = l 8 V ck 100 nA
VDS = -9.6 V, VGS = 0 V -1
Zero Gate Volta e Drain Current I
g DSS TJ = 55°C -10 ”A
VDS S -5 V, VGS = -4.5 V -2.5
On-State Drain Current21 IBM) A
VDS S -5 V, VGS = -2.5 V -0.5
VCs = -45 V, ID = -0.6 A 0.45 0.65
Drain-Source On-Resistancea rDS(0n) Q
I/tss = -2.5 v, ID = AJ.5 A 0.69 0.85
Forward Transconductancea gfs VDs = -5 V, b = -0.6 A 1300 mS
Diode Forward Voltagea VSD Is = -0.6 A, VGS = 0 V -0.9 -1.2 V
Dynamic
Total Gate Charge Q9 2020 3000
- VDS = A, V, VGS ---4.5 V
Gate Source Charge Q95 ID E -0.6A 180 pC
Gate-Drain Charge di 720
Input Capacitance Ciss 110
Output Capacitance Coss VDs = -6 V, VGS = 0, f= 1 MHz 80 pF
Reverse Transfer Capacitance Crss 30
Switching
td(on) 7 12
Turn-On Tlme
tr Vrso=-6 V,R._=129 25 35
ID 5 -0.6 A, VGEN = -A.5 V ns
trs(otr) RG = 6 Q 19 30
Turn-tMore
" 9 15
a. Pulse test: PW s300 ps duty cycle s2%. VPLJ01
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DocumentNumber: 70229
S-04279-Reu. D, 16-Jul-01
VISHAY
TP0101TITS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Ci:: -4
Output Characteristics
0 -I - 2 -3 - 4
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
y VGS - -2.5 v
sk 1 j
g - ...K VGS = -4.5 v
I o..--'""'"
0 -1 - 2 - 3 - 4 - 5
ID - Drain Current (A)
7 Gate Charge
V03 = -6 V
-6 - ID = -0.5 A "
it' -2
0 600 1200 1800 2400 3000
Q9 - Total Gate Charge (pC)
ID — Drain Current (A)
C — Capacitance (pF)
(Normalized)
rnsmn) — On-Resistance (
Transfer Characteristics
-2.0 I I
TA = -55''C
-1.5 25°C
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0
Vss - Gate-to-Source Voltage (V)
Capacitance
0 -3 -6 -9 -12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Vss = -4.5 V
ID = -0.5 A
0.9 s,,.,,,--'''''"
-50 O 50 100 150
To - Junction Temperature (°C)
DocumentNumber: 70229
S-04279-Rev. D, 16-Jul-01
www.vishaycom
TPO101T/TS V:lSHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
'ir." -1 8 .
e g 1.5
'r,' e
- A 1.0
[, 0.1 g ID = -0.5 A
-0,01 JO
0.0 -0.5 -1.0 -1.5 -2.0 -2S O -1 -2 -3 -4 -5
VSD - Source-to-Drain Voltage (V) Ves - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.34 10 N
0.24 / 8
ID = -50 Is/k ',,,? I
ID 0.14 6
.2 ,,,,,w'''''''"
l 0.04 l 4
7f TA = 25 c.
f \ Sing e Pulse
Ah06 I 2 Ns,
-0.16 0 "
-50 o 50 100 150 0.001 0.01 0.1 1 10 100
T: - Junction Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
le Pulse
10r3 10-2 Io-l 1 10 30
Square Wave Pulse Duration (sec)
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Document Number: 70229
S-04279-Reu. D, 16-Jul-01
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