TN6719A ,NPN High Voltage Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TN6725A ,NPN Darlington Transistorapplications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C ..
TN6725A ,NPN Darlington Transistorapplications requiring extremely high current gain at collector currents to 1A. from Process 05 ..
TN6725A ,NPN Darlington TransistorTN6725A Discrete Power & Signal Technologies TN6725AC TO-226 B E NPN Darl ..
TN6726A ,PNP General Purpose AmplifierTN6726A / NZT6726TN6726A NZT6726CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is de ..
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TPS73018DBVT ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear RegulatorMaximum Ratings(1)over operating junction temperature range (unless otherwise noted)MIN MAX UNITInp ..
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TPS7301QD ,Lowest Dropout (LDO) PMOS Voltage Regulator with Integrated Supply Voltage Supervisorblock diagramINRESISTOR DIVIDER OPTIONSDEVICE R1 R2 UNIT¶¶ ¶ENTPS7301 0 ∞ WTPS7325 260 233 kWRESETT ..
TPS7301QDR ,Lowest Dropout (LDO) PMOS Voltage Regulator with Integrated Supply Voltage Supervisorblock diagramINRESISTOR DIVIDER OPTIONSDEVICE R1 R2 UNIT¶¶ ¶ENTPS7301 0 ∞ WTPS7325 260 233 kWRESETT ..
TPS7301QDRG4 ,500mA, Low-Dropout Voltage Regulators with Integrated Delay Reset Function 8-SOIC -40 to 125TPS7301Q, TPS7325Q, TPS7330Q, TPS7333Q, TPS7348Q, TPS7350Q LOW-DROPOUT VOLTAGE REGULATORSWITH INTEG ..
TPS7301QPW ,Lowest Dropout (LDO) PMOS Voltage Regulator with Integrated Supply Voltage Supervisorblock diagramINRESISTOR DIVIDER OPTIONSDEVICE R1 R2 UNIT¶¶ ¶ENTPS7301 0 ∞ WTPS7325 260 233 kWRESETT ..
TN6719A
NPN High Voltage Amplifier
TN6719A Discrete POWER & Signal Technologies TN6719A TO-226 C B E NPN High Voltage Amplifier This device is designed for use in high voltage applications . Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 300 V CEO VCBO Collector-Base Voltage 300 V V Emitter-Base Voltage 7.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN6719A P Total Device Dissipation 1.0 W D 8.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 125 °C/W JC Thermal Resistance, Junction to Ambient 50 °C/W RθJA 1997
