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TN6715AFAIRCHILN/a1400avaiNPN General Purpose Amplifier
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TN6715A ,NPN General Purpose AmplifierTN6715A / NZT6715TN6715A NZT6715CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is de ..
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TN6715A
NPN General Purpose Amplifier
TN6715A / NZT6715 TN6715A NZT6715 C E C B TO-226 C B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 50 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 1.5 A C Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN6715A *NZT6715 P Total Device Dissipation 1.0 1.0 W D Derate above 25°C 8.0 8.0 mW/°C Thermal Resistance, Junction to Case 50 R °C/W θJC R Thermal Resistance, Junction to Ambient 125 125 C/W θ ° JA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm .  1997
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