TN5415A ,PNP High Voltage AmplifierTN5415ADiscrete POWER & SignalTechnologiesTN5415ATO-226CBEPNP High Voltage AmplifierThis device ..
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TPS72515 , LOW INPUT VOLTAGE, 1-A LOW-DROPOUT LINEAR REGULATORS WITH SUPERVISOR
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TN5415A
PNP High Voltage Amplifier
TN5415A Discrete POWER & Signal Technologies TN5415A TO-226 C B E PNP High Voltage Amplifier This device is designed for use as high voltage drivers requiring collector currents to 100 mA. Sourced from Process 76. See MPSA92 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 200 V CEO VCBO Collector-Base Voltage 200 V V Emitter-Base Voltage 4.0 V EBO I Collector Current - Continuous 100 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN5415A P Total Device Dissipation 1.0 W D 8.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 125 °C/W JC Thermal Resistance, Junction to Ambient 50 °C/W RθJA 1997
