| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| TMS4256-12SDL |
TI|Texas Instruments |
N/a |
885 |
 |
262,144-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
TMS4256-15NL TOSHIBA, 262,144-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS4256-15NL , 262,144-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS4256-15NL TI, 262,144-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS4256-15NL TI , 262,144-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS4256-15NL/-10NL TI
TMS4256-12SDL , 262,144-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS4256-15SDL , 262,144-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS44400-70DJ ,1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS45160-70DZ , 262 144-Word By 16-Bit High-Speed Dynamic Random-Access Memories
TMS470R1A288PGEA ,16/32-Bit RISC Flash Microcontroller 144-LQFP Features1• High-Performance Microcontroller for Safety- • Multiple Communication InterfacesCritical ..
TPS62042DGQR ,1.5-V Output, 1.2-A, 95% Efficient Step-Down Converter, 18uA, MSOP-10maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
TPS62042DRCR ,1.5-V Output, 1.2-A, 95% Efficient Step-Down Converter, 18uA, MSOP-10SLVS463B − JUNE 2003 − REVISED OCTOBER 2005These devices have limited built-in ESD protection. The ..
TPS62043DRCR ,1.6-V Output, 1.2-A, 95% Efficient Step-Down Converter, 18uA, MSOP-10ELECTRICAL CHARACTERISTICS (1)V = 3.6 V, V = 1.8 V, I = 600 mA, EN = VIN, T = −40°C to 85°C typic ..
