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TLP909
Photoreflective Sensor Infrared LED + Photodarlington Transistor
TOSHIBA TLP909
TOSHIBA PHOTOREFLECTIVE SENSOR INFRARED LED+PHOTODARLINGTON TRANSISTOR
TLP909
PAPER DETECTORS IN COPIERS, FAX MACHINES, PRINTERS, ETC.
Unit .' mm
DETECTION OF FILM AND COINS (£9 sl
TIMING AND EDGE SENSORS r T
.- 13.0202
cr' Center of -
tl sensor - . g, g
0 Large detection distance : Optimum distance 2.5 mm--4.5 mm N l I E ' I 3 2 7
. . f " I -c7 c "Ill
0 Side mounting type ll 1[II n u ‘3. E m
. . . o-Elon-ns I " 2 ',S
0 Black mold package impermeable to visible light 1 2 3 4 .
0 Package material : Polycarbonate '-. o3.2t0.1 12.0101
t,1,c,1 20 20 g '3‘
o. A' IN$\ (h "ii. "R g
"T-''" L J T fi)) =: g
E Q54) (6.36) e)stie
(R30) 11_0+_0.1 ( ):
o - . t . . t . REFERENCE
MAXIMUM RATINGS (Ta=25 C) 2 o0.7 0.1 20.5 0.25 VALUE
CHARACTERISTIC SYMBOL RATING UNIT JEDEC -
Forward Current IF 50 mA JEITA -
. TOSHIBA 11-13L1
Cl Forward oCurrent Deratmg AIF /° C _0.33 mA /0 C .
m (Ta > 25 C) Weight : 0.83 g (typ.)
'4 Pulse Forward Cu(1;e:1t 1) IFP 600 mA
0 e PIN CONNECTION
Reverse Voltage VR 5 V
Collector-Emitter Voltage VCEO 30 V Reflector
. 2l.l.l.l.l.LLl.l-
g Emitter-Collector Voltage VECO 5 V
t Collector Power Dissipation PC 75 mW // Nts,
m Collector Power Dissipation
F AP / o -1 W/ o / G]
E Derating (Ta > 25°C) C C m C
Collector Current IC 50 mA 2 1 3 4
Operating Temperature Range Topr -25--85 ''C
Storage Temperature Range Tstg -4(r-100 T I. CATHODE
2. ANODE
(Note 1) .' Pulse width s 100 gs, Repetitive frequency = 100 Hz 3. EMITTER
4. COLLECTOR
TOSHIBA TLP909
OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
D Forward Voltage VF IF = 10 mA 1.00 1.15 1.30 V
a Reverse Current IR VR = 5V - - 10 pA
Peak Emission Wavelength AP IF = 10 mA - 940 - nm
(i-cs) Dark Current ID(ICEO) VCE = 16V, IF = 0 - - 0.25 PA
F Peak Sensitivity
E Wavelength AP - - 870 - nm
VCE = 2V, IF = 10mA
Collector Current IC (Note 2) 1 - 20 mA
D V = 5 V I = 25 mA
m CE , F - -
E Leakage Current ILEAK Without Reflector 0.25 pA
Collector-Emitter Saturation
8 Voltage VCE (sat) IF - 10 mA, IC - 0.5mA - 0.85 1.2 V
Rise Time tr VCC = 5 V, IC = 10 mA, - 100 -
. - ps
Fall Time tf RL - 100 n - 100 -
(Note 2) : Reflection ratio 90% at white color paper (KODAK NEUTRAL TEST CARD),
Detecting Distance 5mm.
PRECAUTIONS
The following points must be borne in mind.
9591?.“
Soldering temperature :
Soldering time .. 5 s max
260°C max
(Soldering must be performed 1.5 mm under the package body.)
Clean only the soldered part of the leads. Do not immerse the entire package in the cleaning
solvent.
The package is made of polycarbonate. Oil or chemicals may cause the package to melt or crack.
Mount the device on a level surface.
Screws should be tightened to a clamping torque of 0.59 Nun.
The collector current increases over time due to current flowing in the infrared LED. The design
of circuits which incorporate the device must take into account the change in collector current
over time. The change in collector current is equal to the reciprocal of the change in LED infrared
optical output.
IC (t) =
Po (t)
Po (0)
2 2002-04-04
TOSHIBA TLP909
MARKINGS
Product number
/ Monthly lot number
“"‘ Month of manufacture
(January to December denoted by letters A to L respectively)
Year of manufacture
(last digit of year of manufacture)
Letter color : Silver
3 2002-04-04
TOSHIBA
TLP909
ALLOWABLE FORWARD CURRENT IF (mA)
ALLOWABLE PULSE FORWARD CURRENT
'0 (mA)
COLLECTOR CURRENT
IF - Ta
40 "ss.
0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
IFP - DR
ooo PULSE WIDTH s 100 Ps
Ta = 25°C
10-3 3 10-2 3 10-1 3 10
DUTY RATIO DR
IC - IF (typ.)
Ta = 25°C
3 VCE = 2 V
1 3 5 10 30 50 100 300
FORWARD VOLTAGE IF (mA)
ALLOWABLE COLLECTOR POWER
DISSIPATION PC (mW)
FORWARD CURRENT IF (mA)
COLLECTOR CURRENT 10 (mA)
O 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
IF - VF (typ.)
Ta = 25''C
5 Ta=25''C 50
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
FORWARD VOLTAGE " (V)
IC - VCE (WP)
24 Ta = 25°C
0 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA TLP909
RELATIVE IC - Ta (typ.) VCE(sat) - Ta (typ.)
IF=10mA 8 IF=10mA
F VCE=2V if 10:0.5mA
U) F A
o a: M
-40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C)
SWITCHING CHARACTERISTICS
1 IDOCEO) - Ta (typ.) 30 (NON SATURATED OPERATION) (typ.)
Ta = 25°C
A 1 10
It wr".".-,
A 5 2v OUTPUT t
13 m 909/ r " ’
E E 3 10% //,of
E 3 ,I/
g _ E //
a 10 [ci' 1 I
it t "
g 0.5 //’
10- 0.3 s,,sssy''''"
REFLECTOR
lo- 0.1
20 30 40 50 60 70 80 90 0 1 0.3 o 5 1 3 5 10
AMBIENT TEMPERATURE Ta (°C)
LOAD RESISTANCE RL (KO)
5 2002-04-04
TOSHIBA
DETECTION DISTANCE
CHARACTERISTIC (typ.)
IF = 10mA
VCE = 2V
Ta=25°C
RELATIVE COLLECTOR CURRENT
0 2 4 6 8 10 12
DISTANCE BETWEEN TLP909 and CARD
d (mm)
TEST CONDITIONS FOR DETECTION
DISTANCE AND DETECTION POSITION
CHARACTERISTICS
Kodak neutral test card
Kodak neutral test card
- 2EiiEi21 White
White: Reflection ratio = 90%
Gray : Reflection ratio = 18%
+ Card distance e
RELATIVE COLLECTOR CURRENT
TLP909
DETECTION POSITION
CHARACTERISTIC (typ.)
IF: 10mA
VCE =2V
Ta=25°C
-6 -4 -2 0 2 4 6
CARD MOVING DISTANCE t (mm)
TOSHIBA TLP909
RESTRICTIONS ON PRODUCT USE
000707EAC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
O The information contained herein is subject to change without notice.
7 2002-04-04
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