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TLP832
PHOTO-INTERRUPTER INFRARED LED + PHOTOTRANSISTOR
TOSHIBA TLP832
TOSHIBA PHOTO-INTERRUPTER INFRARED LED+PHOTOTRANSlSTOR
TLP832
ELECTRONIC EQUIPMENT SUCH AS VCRS AND CD
PLAYERS
OFFICE EQUIPMENT SUCH AS COPIERS, PRINTERS AND
FAX MACHINES
AUTOMATIC VENDING MACHINES
VARIOUS POSITION DETECTION SENSORS
The TLP832 photo-interrupter consists of a GaAs
infrared LED and an Si phototransistor.
Housed in a short-lead package, this device is ideal
for automatic mounting.
0 Designed for direct mounting on printed circuit
boards (positioning pins inclueded).
0 Short leads enabling automatic mounting TOSHIBA 11-14F1
: Lead length 3.4mm , 0.3mm Weight : 0.58g (typ.)
0 Board thickness .' 1.6 mm or less
0 Gap : 5 mm
0 Resolution .' Slit width = 0.5 mm
0 High current transfer ratio : IC/ IF = 5% (min)
0 High temperature operation : Topr = 95°C (max)
0 High response speed : tr, tf= 15 gs (typ.)
0 Detector impermeable to visible light
0 Package material .' Polybutylene terephthalate (UL94V-0, black)
1 2002-04-04
TOSHIBA TLP832
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current IF 50 mA
© Forward Current 25°C < Ta s 85°C -0 33
m o . o
.4 Derating Ta > 85°C AIF/ C -2 mA/ C
Reverse Voltage VR 5 V
m Collector-Emitter Voltage VCEO 35 V
E Emitter-Collector Voltage VECO 5 V
o Collector Power Dissipation PC 75 mW
Collector Power Dissipation
F o - o
El Derating (Ta > 25°C) APC/ C 1 mW/ C
Collector Current IC 50 mA
Operating Temperature Topr -30--85 "C
Storage Temperature Tstg -40-100 T
Soldering Temperature (5 s) (Note 1) Tsol 260 °C
(Note 1) : At the location of 1.5mm from the resin package bottom
MARKINGS
Monthly lot number
L Month of manufacture
(January to December denoted by letters A to L respectively)
Year of manufacture
(last digit of year of manufactur)
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC SYMBOL Min Typ. Max UNIT
Supply Voltage VCC - 5 24 V
Forward Current IF - - 25 mA
Operating Temperature Topr - 10 - 75 T
2 2002-04-04
TOSHIBA TLP832
OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
Cl Forward Voltage VF IF = 10mA 1.00 1.15 1.30 V
E Reverse Current IR VR = 5 V - - 10 pA
Peak Emission Wavelength AP IF = 10mA - 940 - nm
'ii) Dark Current ID (ICEO) VCE = 24V, IF = 0 - - 0.1 PA
E: Peak Sensitivity Wavelength AP - 870 - nm
a Current Transfer Ratio Ic/IF VCE = 2V, IF = 10mA 5 - 100 %
Collector-Emitter Saturation
A I = 2 mA I = . mA - .1 .
b Voltage VCE (sat) F 0 , C 0 5 0 0 35 V
0 Rise Time tr VCC = 5V, IC = 1 mA, - 15 50
O . - ps
Fall Time tf RL - 1 kn (Note 2) - 15 50
(Note 2) : Switching time measurement circuit and waveform
IF - cr, VCC Ire-l-l-
- VOUT - 90%
RL VOUT
d g 10%
tr l l 'ts
PRECAUTIONS
1. When removing flux with chemicals after soldering, clean only the soldered part of the leads.
Do not immerse the entire package in the cleaning solvent. Chemical residue on the LED emitter
or the phototransistor may adversely affect the optical characteristics of the device and may
drastically reduce the conversion efficiency.
2. Care must taken in relation to the environment in which the device is to be installed.
Oil or chemicals may cause the package to melt or crack.
3. Mount the device on a level surface.
4. Keep the device away from external light. Although the phototransistor is of low optical
sensitivity, the device may malfunction if external light with a wavelength of 700 nm or more is
allowed to impinge on it.
5. Conversion efficiency falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in conversion efficiency over time.
The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is
Ic/IF(t) - P0(t)
IC/IF (0) - Po (0)
3 2002-04-04
TOSHIBA TLP832
PACKAGE DIMENSIONS
11-14F1 Unit : mm
LEO marking 1,i:,c,, Product No. (TL omitted)
-I I I I A
2 - Tttd N
_ EE- --_--5D-- - 9.
_l l I I ,
Country of origin
4 (13.46)
_ - 5:0 1
sf/i/i Ct? A =
q "I o
, ' t y
Center of sensor
(7.95)
’ .Sf‘
2-¢0.7to.1
, - s .
4 44:04:01
(10.16) (2.54)
5,210.1
( ) : Reference value
Weight : 0.58g (typ.)
PIN CONNECTION
Cathode
Collector
Emitter
4 2002-04-04
TOSHIBA
Stick specification of TLP832
Top view
9.4 6.4
650. 0:1. 5
¢3. 15
NVde‘ NI EWW OllVlSLlNV VEIHSOJ.
TOSHIBA ANTISTATIC MADE IN JAPAN
Unit .' mm
TLP832
Unless otherwise specified, tolerance '. i0.3mm
Material : Polyvinyl chloride (PVC)
Cross section
14.6 w
1.6 5.0
(Note) : Marking color is red.
TOSHIBA TLP832
C) Packing format
Pack 100 devices are packed in a magazine and put it in a carton.
The carton contains 20 magazines. Stopper pin
TLP832
Stop
Ciiy ci_i_r______rr____________________r____r?
Plastic adhesive tape
_--------" Quality assurance seal
Barcode label
Carton containing
20 magazines
Magazine containing 100 devices
C) Label
Product number : TLP831
Add.Code '. (blank)
TYPE TLP832 w"
' ........... ----" Quantity
ADD. C w"" Q'TY ', 'rn-sc-sr-"'""
NOTE , --------_- '; _-------" Lot number
'r""""""""""""""""""""""""""""""""""""""""""""' u‘ Toshiba code
_ Barcode
TOSHIBA MADE IN JAPAN
6 2002-04-04
TOSHIBA
1}“ (mA)
ALLOWABLE FORWARD CURRENT
FORWARD CURRENT IF (mA)
COLLECTOR CURRENT 10 (mA)
0 20 40 60 80 100
AMBIENT TEMPERATURE Ta CC)
IF - VF (typ.)
0.8 0.9 1.0 1.1 1.2 1.3 1.4
FORWARD VOLTAGE Vp (V)
Ta = 25°C
VCE = 2 v
- VCE = 0.4 V
SAMPLE 2
SAMPLE 1
1 3 5 10 30 50 100
FORWARD CURRENT IF (mA)
ALLOWABLE COLLECTOR POWER
DISSIPATION PC (mW)
CURRENT TRANSFER RATIO
lc/IF (%)
COLLECTOR CURRENT IC (mA)
TLP832
PC -Ta
20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
IC/IF - IF
Ta = 25°C
VCE = 2 V
----- VCE = 0.4V
SAMPLE 2
3 5 10 30 50 100
FORWARD CURRENT IF (mA)
IC - VCE (typ.)
2 4 6 8 10 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA
TLP832
COLLIV%{.%%ggflqug§(ssaAt?U(%§TION RELATIVE COLLECTOR CURRENT
SWITCHING TIME (/18)
RELATIVE IC - Ta (typ.)
- 40 - 20 0 20 40 60 80 1 00
AMBIENT TEMPERATURE Ta (°C)
VCE (sat) - Ta (typ.)
1C = 0.5 mA
IF = 20 mA
- 40 - 20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta CC)
SWITCHING CHARACTERISTICS
(SATURATED OPERATION) (typ.)
Ta = 25°C tf
IF = 20 mA
1000 VCC = 5 V
V g 4.65 V
500 OUT
1 3 5 10 30 50 100
LOAD RESISTANCE RL (km
300 500
DARK CURRENT IDUCEO) 01/0
SWITCHING TIME
ID (ICEo) - Ta (typ.)
0 20 40 60 80 100
AMBIENT TEMPERATURE Ta CC)
SWITCHING CHARACTERISTICS
0 (NON SATURATED OPERATION) (typ.)
300 Ta = 25°C
VCC = 5 V
VOUT = l V
tr, ff
0.1 0.3 0.5 l 3 5 10
LOAD RESISTANCE RL (k0)
TOSHIBA
DETECTION POSITION
CHARACTERISTICS (l) (typ.)
IF = 10mA
VCE = 2V
Ta=25°C
- - - +
SHUTTERW
DETECTION
POSITION
d = 0 i 0.3 mm
RELATIVE COLLECTOR CURRENT
- 3 - 2 - 1 O 1 2 3
DISTANCE d (mm)
RELATIVE POSITIONING OF SHUTTER AND DEVICE
RELATIVE COLLECTOR CURRENT
TLP832
DETECTION POSITION
CHARACTERISTICS (2) (typ.)
IF = 10 mA
VCE = 2V
Ta = 25''C
/S U R
DETECTION
POSITION
+ 1.25
d = 7.95- LM mm
5 6 7 8 9 10 11 12
DISTANCE d (mm)
For normal operation position the shutter and the device as shown in the figure below. By considering
the device's detection direction characteristic and switching time, determine the shutter slit width and
pitch.
Shutter
I-',',--,
\\\\\\\\\
9.2min
Unit : mm
Center of sensor
6.6max
Cross section between A and A'
TOSHIBA TLP832
RESTRICTIONS ON PRODUCT USE
000707EAC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
O The information contained herein is subject to change without notice.
10 2002-04-04
:
www.loq.com
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