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TLP785
Photocoupler (phototransistor output)
TLP785,TLP785F 3
1 : Anode
2 : Cathode
TOSHIBA Photocoupler GaAs IRED & Photo−Transistor
TLP785,TLP785F Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
The TOSHIBA TLP785 consists of a silicone phototransistor optically
coupled to a gallium arsenide (GaAs) infrared emitting diode in a four
lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
TLP785F is a lead forming type for the long creepage surface mounting
of TLP785. TLP785: 7.62mm pitch type DIP4 TLP785F: 10.16mm pitch type DIP4 Collector-emitter voltage: 80V (min.) Current transfer ratio: 50% (min.)
Rank GB: 100% (min.) Isolation voltage: 5000Vrms (min.) UL approved: UL1577, file No. E67349 BSI under application: BS EN60065:2002
BS EN60950-1:2006
• SEMKO under application:EN60065:2002
EN60950-1:2001, EN60335-1:2002
• Option(D4)type
VDE approved: DIN EN60747-5-2 (Note): When an EN60747-5-2 approved type is needed,
Please designate “Option (D4)” Construction mechanical rating
Creepage distance
Clearance 7.0mm(min)
Insulation thickness
Inner creepage distance
Unit: mm
Weight: 0.32 g (typ.)
Unit: mm
Weight: 0.32g (typ.)
TLP785
TLP785F
