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TLP543-TLP543J-TLP545-TLP545J Fast Delivery,Good Price
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TLP543TOSN/a194avaigaas ired & photo-thyristor
TLP543JTOSN/a60avaigaas ired & photo-thyristor
TLP545TOSHIBAN/a2000avaigaas ired & photo-thyristor
TLP545JTOSN/a102avaigaas ired & photo-thyristor
TLP545JTOSHIBAN/a1857avaigaas ired & photo-thyristor
TLP545JTOSHIBA ?N/a140avaigaas ired & photo-thyristor


TLP545 ,gaas ired & photo-thyristorPIN CONFIGURATIONS (TOP VIE“)TLP56 " TLPE‘BJI.. NC 1: ANODBIt.. ANODE 2.. CATHODE3: CATHODE 3.. NCo ..
TLP545J ,gaas ired & photo-thyristorPIN CONFIGURATIONS (TOP VIE“)TLP56 " TLPE‘BJI.. NC 1: ANODBIt.. ANODE 2.. CATHODE3: CATHODE 3.. NCo ..
TLP545J ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TLP545J ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TLP548J ,Photocoupler (photothyristor output)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I 50 mA FFor ..
TLP549J ,Photocoupler (photothyristor output)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I 50 mA FFor ..
TMS27PC512-20NL ,524 288-Bit Programmable Read-Only Memory 28-PDIP 0 to 70
TMS27PC512-2FML , 524 288-Bit Programmable Read-Only Memory
TMS27PC512-2NL ,524 288-Bit Programmable Read-Only Memory 28-PDIP 0 to 70
TMS27PC512-FML , 524 288-Bit Programmable Read-Only Memory
TMS28F004AFT80BDCDL , 524 288 By 8-Bit Auto-Select Boot-Block Flash Memory
TMS28F008ALB-12BDCDL , 1 048 576 By 8-Bit Autoselect Boot Block Flash Memory


TLP543-TLP543J-TLP545-TLP545J
gaas ired & photo-thyristor
Ha oirllruvr?iesuo unm7usa 7 T
TOSHIBA 1DTS(ytlrT'E/()pT()1
m --=Ert=t=--
9097250 TOSHIBA {DISCRETE/OPTO)
990 17452 ‘0
TLP543J, TLP545J
IRED & PHOTO-THYRISTOR
www.chipinfo.ru
Unit la m
T L5 rnpscu
The TOSHIBA TLPJIOJJ consists of a phot- o.
thyristor optically coupled to a gallium c
arsenide infrared emitting diode in a seven Taiifz: 7.621025
lead plastic DIP package. I
The TOSHIBA 11,256.! consists of a photo- 12 ' [L
thyristor optically coupled to a gallium _Q.n_, _
ataenide infrared emitting diode in a aix 'e-".tAte V'"'"-""")
lead plastic DIP package. JRDRtl -
RIAJ -
. Peak Off-State Voltage t 600V Min. 105mm li-lot"
. Trigger LED Current ' lOmA Hax. o 5 '
' On-State Current t 150M Max. .-. H - turns:
. Isolation Voltage t 2500Vma Hin. El
. UL Recognized I File No. E67349 1 gr?
112*025 7.621025
MAXIMUM RATINGS (Ta =25;C) g g. .
CHARACTER1STtC SYMBOL RATING UNIT 3: j 432513.35
Forward Current IF 60 M 2,5410“, ' _ 735...“,0 I
Forward Current Dentin; (Ta239°c) AIFI°C -0.7 mAl'c
Peak Forward Current (100w pulse, 100mm) Irr 1 A 2:150 .
a Powter Dissipation PD 100 mil 105;]an II-TAI
Power Dissipation berating (T3225°C) APD/‘c -l.0 w/'c
Reverse Voltage irR 5 y
Junction Temperature Tj 125 " PIN CONFIGURATIONS (TOP VIE")
Peak Forward Voltage otae27tttt) VDRH 600 V TLPEOSJ TLPG‘BJ
Peak Reverse Voltage WGtet271ut) Wtgte 600 V 1t 7 1 e
On-State Current IT(IIMS) 150 “A at I a T, 5
M IH-state Current berating (Ta225°6) AITI°C .-2.o mh/'C 3 3 Fe a a "
E f?y? On-Suze Current ttoops pulse, lZOppa) In 3 ' tb
E Peak One Cycle Surge Current ITSH 2
o Peak Reverse Gate Voltage irctt 5 It NC 1: ANODB
Power Dissipation Pp 150 m" r.: tgh, g: 337110912
Power Dissipation Derating (TazZS'C) APDI°C -2.0 my/'C I.. " k.. CATHODB
lit GATE St MODE
Junction Temperature Tj 100 'C 6t CATKODE 6.. GATE
Storgat Temperature Range Tug -55'\-150 “C " ANODE
Operating Temperature Range Topr -55ru10t1 ''C
Lead Soldering Temperature (lOsec.) Tsold 260 'c
Total Package Power Dissipation " 250 tall
Total Package Power Dissipation berating (TazZS'C) AP-r/‘c -3.3 nwl'c
Isolation Voltage (Ac, 1 min, mgsoz) BVs 2500 Vms
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Supply Voltage VAC - - 240 Vac
Fatwa: Current lg 15 20 25 mA
Operating Tepperature Tape ~25 - 85 "C
Gate to Cathode Resistance Rim - to 27 kn
Gate to Cathode Capacity Rpt - 0.01 0.1 "
- 449 _
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TOSHIBA INrSCRE:TE/0pT(yy “H os:fruvrizso unmusa 6 [r
-t=--tt==l==Mt=====-==mt--
9097250 TOSHIBA ttHSCRETEfOPTtD 990 17453 ' trT"ll-en i
INDIVIDUAL ELECTRICAL CHARACTERISTICS (13-25%)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage VP TP=1ihah 1.0 1.15 1.3 V
:11 Reverse Current IR View - - 10 PA
Capacitance . CT V-O, fst1NItz - 30 - pF
" a . -
Off-State Current 1mm VAR soov Ta 25 c 10 5000 "
. RCK-27kn m-ss'c - 1 150 "
- ' “25°C - 10 5000 "
Reverse Current Im V“ 600V a '
g RCK'nkn Ta=85 C - 1 150 "
b' On-State Voltage vm Im-IOOmA - 0.9 1.3 v
E Holding Current Tit Ru(a27kn - 0.2 - mA
Off-Stata dv/dt dv/dt VAK=I|20V, ch-27k0 - 10 - V/us
V=0, f=1HHz
Capacitance ci Anode to Gate - 20 - P
Gate to Cathode - 350 - P
COUPLED CHARACTERISTICS (Ta-25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Trigger LED Current In VAK=6V, m=z7kn - S 10 mA '
Turn-un Time ton IF‘3W. VAABSOV - 10 - "
Rax=27kn
Coupled dv/dt dv/dt VS=500V, Rtye27kn 500 - - V/us
Capacitance Input to Output Cs Vs=0, f=lMHz - 0.8 - 1:?
Isolation Resistance Rs Vs-SOOV 5,4010 1014 - 9
M, 1 minute 2500 - - Itras
Isolation Voltage B1rs M, 1 second - 5000 - Vms
DC, 1 minute - 5000 - Vdc
" - Ta IT(RMS) - " IFF - "
a it n PULSE nnmgxoo“
, r-N , Tn = ast;
= g < 200 in
u " S g 4
" o v 3.5
gs : ti? 1 E ,
O g E DH
h h t V l Ps
bl H g r?? u
m a, ma
5 d tr,
[l o? "
" o u “0
"20 0 an 40 so in mo 120 -20 0 al " so no 100 120 103 Io" 3 Io" a ur' T loo
AMBIENT rupzmruna n (tl) mm” TEMPERATURE " (t3) nun ems RATIO "
IT(RMS) - Ta I - v
1m AVF/ATa - I? A
n 513 i!
g ao g; ,
w. tl H
a 10 t Fe
g 5 U; g
3 i“\ n.
g M y. "
" 23. "
" 1 H n
n ..2Fn ,
5 (15 " g PULSE WlDTHSlouu
E ot,' 2 REPEl'I’tIVP.
2 as E: M PMyl1nur't3X=r1t30Ha
g; g Ta=gst:
“t 00 -ah 50 " 1
a 09 1.0 La 1.6 1,3 1a ho 1 CG 1 3 a. M m IA Mt 22 as M
rommm voumx v; (v) "“‘WW 1gtrRr1ENT " (m) PULSE FORWARD CURRENT v" (v)
- 450 -
www.chipinfo.ru Be sure to visit CHlPlNFO web site for more information.
TOSHIBA EMiSCRETE/()PT()1
097250 TOSHIBA tDi8CRETE/OPTtD
990 17454
M oir0mvsvso 001mm: Cl [I
trr-sl f -8 'l
fURN—ON TIME [on (M!)
OFY-STATE VOLTAGE 4V/dJ: (V/ul)
CRITICAL RATE OF RISE OF
HOLDING CURRENT 13 (mA)
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tou - " " - Ta
TA=25C
Rb=loon
v -50v fi
AA it,!',
naxamkn g 3,
27:0 g a1
a n m u: 60 so 100
12 lo a, GO " mum Tmm‘runz n (1:)
110mm“) Gunman " (m)
dV/dt - Rat dv/dt - Cox
mo p. 8)
o ra-esv
100 E A VAK-AOOV
“5H: Roxanna
50 trg""
ao ri,'',
10 55 5
500 Ian 15m
OATE-CATHODE CAPACITANCE Gan Or)
1 a 10 ao la)
OATIvCATHDDE nzsxs-umcz Fox (m)
1H - Box
OATB-GATMODZ RESISTANCE Ras (kn)
In (nA)
TRIOER LED CURRENT
In (M)
TRIGGER LED CURRENT
In - Ta
Rax=lokn R”: won
o ar M) w a) 100
mmm- ramnunz r. (c)
In - Box
a m :50 100
UATie-CATli0Im nzsxsrucn Box (kn)
Be sure to visit CHIPINFO web site for more information.

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