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TLN108
INFRARED LED GaAs INFRARED EMITTER
TOSHIBA TLN108
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
TLINM08
INFRARED LED FOR PHOTOSENSORS Unit : mm
¢5.8max
OPTO-ELECTRONIC SWITCHES +0.1
TAPE AND CARD READERS (W
SMOKE SENSORS g or? ll.
E ii w
EQUIPMENT USING INFRARED TRANSMISSION ei 3
2-t0.4r+c0.1 I E
o T0-18 metal package 1 2 L.
2.54:0.3
0 High radiant intensity : IE = 20 mW/ sr (typ.)
0 Excellent radiant-intensity linearity. Modulation by pulse
operation and high frequency is possible.
0 Highly reliable due to hermetic seal
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT TOSHIBA 4-5Q2
Forward Current IF 100 mA Weight : 0.33 g (typ.)
Forward Current Derating o o
(Ta > 25°C) AIF/ C -1 mA/ C PIN CONNECTION
Pulse Forward Current (Note) IFP 1 A
Reverse Voltage VR 5 V 1 o-M-o 2
Operating Temperature Range Topr -40--125 C l. Anode
Storage Temperature Range Tstg -55--150 °C
2. Cathode (case)
(Note) : Pulse width s 100 ps, repetitive frequency = 100 Hz
MARKINGS
Product No. (TL omitted)
Monthl lot number
fiiiit 1 r H Cl r‘.
[13.102.3J'LJLJ “ "L Month of manufacture
"tir' l (J anuary to December denoted by letters A to L respectively)
Year of manufacture
Letter color : Red (last digit of year of manufacture)
1 2002-03-20
TOSHIBA TLN108
OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
Forward Voltage VF IF = 50 mA - 1.3 1.4 V
Pulse Forward Voltage VFP IFP = 1 A - 2.4 - V
Reverse Current IR VR = 5 V - - 10 PA
Radiant Intensity IE IF = 50 mA 10 20 - mW/ sr
Radiant Power Po IF = 50 mA - 3 - mW
Capacitance CT VR = 0, f = 1 MHz - 30 - pF
Peak Emission Wavelength lp IF = 50 mA - 940 - nm
Spectral Line Half Width AA IF = 50mA - 50 - nm
Half Value Angle rl, IF = 50mA - i8 - C)
PRECAUTIONS
Please be careful of the followings.
Soldering temperature : 260°C max
Soldering time : 5 s max
(Soldering must be performed 1.5m from the bottom of the package.)
When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
Radiant intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 :1.
IE (t)
Po (t)
IE (0) - Po (0)
TOSHIBA
FORWARD CURRENT IF (mA) ALLOWABLE FORWARD CURRENT 11: (mA)
RELATIVE INTENSITY
00 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
IF - VF (typ.)
Ta = 100°C
0.9 1.0 1.1 1.2 1.3 1.4 1.5
FORWARD VOLTAGE VF (V)
WAVELENGTH CHARACTERIISTIC
(typ.)
IF = 50 mA
Ta = 25°C
900 920 940 960 980 1000 1020
WAVELENGTH l (nm)
PULSE FORWARD CURRENT [pp
(mW/sr)
RADIANT INTENSITY
TLN108
IFP - VFP (typ.)
PULSE WIDTH s 100 [as
REPETITIVE FREQUENCY
= 100Hz
Ta = 25°C
1.2 1.4 1.6 1.8 2.0 2.2 2.4
PULSE FORWARD VOLTAGE VFp (V)
IE - IF (typ.)
PULSE WIDTH s 100 [As
REPETITIVE FREQUENCY PULSE
= 100 Hz
Ta = 25°C
3 10 30 100 300
FORWARD CURRENT IF (mA)
TOSHIBA
RADIATION PATTERN (typ.)
(Ta = 25°C)
0 o'' 0
20° 10 10 20°
90° 90''
0 0.2 0.4 0.6 0.8 1.0
RELATIVE INTENSITY
IFP - PW
10 kHz 2 kHz 500 Hz
5 kHz 1 kHz 200 Hz
ALLOWABLE PULSE FORWARD CURRENT
IFp (mA)
pr 10p 30p 100p 300p 1m 3m 10m
PULSE WIDTH Pw (s)
RELATIVE RADIANT INTENSITY
COLLECTOR CURRENT 10 (mA)
TLN108
RELATIVE IE - Ta (typ.)
-40 -20 0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE Ta (°C)
COUPLING CHARACTERISTICS WITH
TPSSOIA
Ta = 25''C
IE = 42 mW/sr
TPS60IN-IL = 226 PA
at VCE = 3 V
E = 0.1 mW/cm2
1 3 5 10 30 50 100
DISTANCE d (mm)
TOSHIBA TLN108
RESTRICTIONS ON PRODUCT USE
000707EAC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
O The information contained herein is subject to change without notice.
5 2002-03-20
:
www.loq.com
.
