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TLE2161-TLE2161CD-TLE2161CP-TLE2161ID-TLE2161IDRG4 Fast Delivery,Good Price
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TLE2161TIN/a144avaiJFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifier
TLE2161CDTIN/a300avaiJFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifier
TLE2161CPTIN/a3avaiJFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifier
TLE2161IDTIN/a144avaiJFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifier
TLE2161IDRG4TIN/a5000avaiJFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifier 8-SOIC


TLE2161IDRG4 ,JFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifier 8-SOIC maximum ratings over operating free-air temperature range (unless otherwise noted)Supply voltage, V ..
TLE2301INE ,Excalibur 3-State-Output Wide-Bandwidth Power Operational Amplifierfeatures also makes the device3well suited for other high-current applications(e.g., motor drivers ..
TLE2425 ,Precision Virtual Groundmaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
TLE2425CD ,Precision Virtual Groundelectrical characteristics at specified free-air temperature, V = 5 V, I = 0 (unless otherwise note ..
TLE2425CDR ,Precision Virtual Ground      SLOS065D − MARCH 1991 − REVISED APRIL 2002 2.5-V Virtual Ground for ..
TLE2425CDRG4 ,Precision Virtual Ground 8-SOIC WWW.TI.COMPOST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443VV) − Output Voltage Change − µVO ..
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TLE2161-TLE2161CD-TLE2161CP-TLE2161ID-TLE2161IDRG4
JFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifier
Low Supply Current... 280 μA Typ Decompensated for High Slew Rate andGain-Bandwidth Product
AVD = 0.5 Min
Slew Rate = 10 V/μs Typ
Gain-Bandwidth Product = 6.5 MHz Typ
Low Offset Voltage Drift With Time
0.04 μV/Month Typ
Low Input Bias Current...5 pA Typ

description

The TLE2161, TLE2161A, and TLE2161B are
JFET-input, low-power, precision operational
amplifiers manufactured using the Texas
Instruments Excalibur process. Decompensated
for stability with a minimum closed-loop gain of 5,
these devices combine outstanding output drive
capability with low power consumption, excellent
dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET
advantages of fast slew rates and low input bias
and offset currents, the Excalibur process offers
outstanding parametric stability over time and
temperature. This results in a device that remains
precise even with changes in temperature and
over years of use.
AVAILABLE OPTIONS

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
10 k1 k100
RL – Load Resistance – Ω
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
LOAD RESISTANCE
– Maximum Peak-to-Peak Output V
oltage – V
O(PP)
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