TLC2201AM ,Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-PDIP -55 to 125
TLC2201AMFKB , Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
TLC2201BIP ,Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
TLC2201CD ,Low Noise Precision Rail-To-Rail Output Operational Amplifier
TLC2202ACD ,Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier
TLC2202ACDG4 ,Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC
TMH0505S , DC/DC Converters
TMK325BJ226MM-T , Dual 15A/Single 30A Step-Down Power Module
TMM2018AP-25 ,16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supplyTOSHIBA Il rrDESCR I PTIONThe TMM2018AP ls a 16,384 bits high speed and low power static random acc ..
TMM2018AP-25 ,16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supplyFEATURES . Single 5V power supply. Fast access time . Fully static operationtACC=25nsz TNN2018AP-25 ..
TMM2018AP-35 ,16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supplyTOSHIBA Il rrDESCR I PTIONThe TMM2018AP ls a 16,384 bits high speed and low power static random acc ..
TMM2018AP-45 ,16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supplyfeatures with a maximum access time of 25ns/35ns/45ns and maximum operating currentof 150mA/135mA/1 ..
TLC2201AM
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
With Temperature... 0.5 µV/°C Typ Rail-to-Rail Output Swing
Split-Supply Operation
descriptionThe TLC220x, TLC220xA, TLC220xB, and
TLC220xY are precision, low-noise operational
amplifiers using Texas Instruments Advanced
LinCMOS process. These devices combine the
noise performance of the lowest-noise JFET
amplifiers with the dc precision available
previously only in bipolar amplifiers. The
Advanced LinCMOS process uses silicon-gate
technology to obtain input offset voltage stability
with temperature and time that far exceeds that
obtainable using metal-gate technology. In
addition, this technology makes possible input
impedance levels that meet or exceed levels
offered by top-gate JFET and expensive
dielectric-isolated devices.
The combination of excellent DC and noise
performance with a common-mode input voltage
range that includes the negative rail makes these
devices an ideal choice for high-impedance,
low-level signal-conditioning applications in either
single-supply or split-supply configurations.
The device inputs and outputs are designed to withstand −100-mA surge currents without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under
MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure
to ESD may result in degradation of the parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from −40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of −55°C to 125°C.
Advanced LinCMOS is a trademark of . All other trademarks are the property of their respective owners.
10 100
oltage − nV/ Hz
f − Frequency − Hz
TYPICAL EQUIVALENT
INPUT NOISE VOLTAGE
FREQUENCY
1 k 10 k
