TK8A45D ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK8A50D ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 3.125 ..
TK8A50DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 Ф0.2 M A Characteristics Symbol Rating Unit 2.54 2 ..
TK8A55DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK8A60DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 600 ..
TK8A60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TLR346T ,LED DISPLAY
TLR346T ,LED DISPLAY
TLR347T ,LED DISPLAY
TLR358 ,LED DISPLAY
TLR362T ,LED DISPLAY
TLR366T ,LED DISPLAY
TK8A45D
Power MOSFET (N-ch 250V<VDSS≤500V)
TK8A45D
MOSFETs Silicon N-Channel MOS (π-MOS)
TK8A45DTK8A45DTK8A45DTK8A45D
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 0.73 Ω (typ.)
(2) High forward transfer admittance: |Yfs| = 3.8 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V)
(4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
