TK80F08K3 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) 1.1 0.76 ± 0.1 Characteristics Symbol Rating Unit 2.35 ± 0.1 0 ..
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TK80S06K3L ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
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TLR346T ,LED DISPLAY
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TLR347T ,LED DISPLAY
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TK80F08K3
Power MOSFET (N-ch single 60V<VDSS≤150V)
TK80F08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK80F08K3 Swiching Regulator Low drain-source ON-resistance: RDS (ON) = 3.4 mΩ (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature
is below 175°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 58 μH, RG = 1 Ω, IAR = 80 A
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature.
Note 4: 175°C refers to AEC-Q101.
Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 1.07 g (typ.)
