TK2P60D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 0.8 MAX. 0.6 MAX.1.05 MAX. 0.6 ± 0.15 Characteristics Symbol R ..
TK30A06J3A ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics 2Characteristics Symbol Max Unit Thermal resistance, channel to case R 5.0 ..
TK30A06N1 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK30E06N1 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TK30S06K3L ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK31A60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TLP621-2 ,6V; 50mA optically coupled isolatorTLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−−−−2,TLP ..
TLP621-3 ,Photocoupler
TLP621-3 ,Photocoupler
TLP621-4 ,Photocoupler GaAs Ired & Photo -TransistorTLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−−−−2,TLP ..
TLP624 ,Photocoupler GaAs Ired & Photo -TransistorTLP624,TLP6242,TLP6244 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP624,TLP624−−−−2,TL ..
TLP624-2 ,5V; 50mA low input current phototransistor optically coupled isolatorElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit1 ..
TK2P60D
Power MOSFET (N-ch 500V<VDSS≤700V)
TK2P60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK2P60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 1.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 44.1 mH, RG = 25Ω, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight : 0.36 g (typ.)
