TK20E60U ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK20H50C ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V 500 ..
TK20J50D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 1.0 －0.25 5.45 ± 0.2 5.45 ± 0.2 Characteristics Symbol Rating ..
TK20J60U ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 0.658 ..
TK20P04M1 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK20S04K3L ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TLP620-4 ,Photocoupler GaAs Ired & Photo .TransistorTLP620,TLP620−2,TLP620−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP620, TLP620−2, TLP6 ..
TLP620-4GB , Programmable Controllers AC / DC−Input Module Telecommunication
TLP620-4GB , Programmable Controllers AC / DC−Input Module Telecommunication
TLP621 ,Photocoupler GaAs Ired & Photo -TransistorTLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−−−−2,TLP ..
TLP621-2 ,6V; 50mA optically coupled isolatorTLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−−−−2,TLP ..
TLP621-3 ,Photocoupler
TK20A60U
Power MOSFET (N-ch 500V<VDSS≤700V)
TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK20A60U Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25 Ω, IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight : 1.7 g (typ.)
