TK15H50C ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V 500 ..
TK15J60U ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 0.735 ..
TK16A55D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK16A60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK16A60W5 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK16C60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TLP590B ,Photocoupler GaAlAs Ired & Photo .Diode Array
TLP590B ,Photocoupler GaAlAs Ired & Photo .Diode Array
TLP597G ,Photocoupler Photo Relay
TLP597G ,Photocoupler Photo Relay
TLP597GA ,Photocoupler Photo Relay
TLP597GA. ,Photocoupler Photo Relay
TK15H50C
Power MOSFET (N-ch 250V<VDSS≤500V)
TK15H50C
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK15H50C Switching Regulator Applications
• Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.78 mH, RG = 25 Ω, IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 3.8 g (typ.)
