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TJ8S06M3LToshibaN/a30000avaiPower MOSFET (P-ch single)


TJ8S06M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
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TLP176D ,PHOTOCOUPLER GaAs IRED & PHOTO-MOS FETPIN CONFIGURATION (TOP VIEW)1-Form-ALe,]2NI—I1:ANODE2:CATHODETLP176DMAXIMUM RATINGS (Ta = 25°C)CHAR ..
TLP176G ,Photocoupler GaAs Ired & Photo .MOS FETPin Configuration Schematic (top view) 1-Form-A1 4 1 4 4 3 3 2 1 2 2 3 1. : Anode 2. : Cathode 3 ..
TLP176GA ,Photocoupler PhotorelayPin Configuration (top view)JEITA ― TOSHIBA 11-5H1 Weight: 0.1 g (typ.) 1 4 2 3 1: ANODE 2: CATHO ..
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TJ8S06M3L
Power MOSFET (P-ch single)
TJ8S06M3L
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ8S06M3LTJ8S06M3LTJ8S06M3LTJ8S06M3L
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)
(3) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
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