IC Phoenix
 
Home ›  TT35 > TJ80S04M3L,Power MOSFET (P-ch single)
TJ80S04M3L Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
TJ80S04M3LToshibaN/a30000avaiPower MOSFET (P-ch single)


TJ80S04M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ8S06M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ9A10M3 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJA1010T ,Octal Low Side Driver OLSD
TJA1010T ,Octal Low Side Driver OLSD
TJA1010T ,Octal Low Side Driver OLSD
TLP176D ,PHOTOCOUPLER GaAs IRED & PHOTO-MOS FETapplications whichrequire space savings.I is I I 05:03SOP 4pin (2.54SOP4) : l-Form-A MP. bl J" 2.54 ..
TLP176D ,PHOTOCOUPLER GaAs IRED & PHOTO-MOS FETPIN CONFIGURATION (TOP VIEW)1-Form-ALe,]2NI—I1:ANODE2:CATHODETLP176DMAXIMUM RATINGS (Ta = 25°C)CHAR ..
TLP176G ,Photocoupler GaAs Ired & Photo .MOS FETPin Configuration Schematic (top view) 1-Form-A1 4 1 4 4 3 3 2 1 2 2 3 1. : Anode 2. : Cathode 3 ..
TLP176GA ,Photocoupler PhotorelayPin Configuration (top view)JEITA ― TOSHIBA 11-5H1 Weight: 0.1 g (typ.) 1 4 2 3 1: ANODE 2: CATHO ..
TLP180 ,Photocoupler GaAs Ired & Photo .TransistorTLP180 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP180 Programmable Controllers Unit in ..
TLP181 ,Photocoupler GaAs Ired & Photo .TransistorTLP181 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP181 Office Machine Unit in mmProgra ..


TJ80S04M3L
Power MOSFET (P-ch single)
TJ80S04M3L
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ80S04M3LTJ80S04M3LTJ80S04M3LTJ80S04M3L
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(3) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED