TIP31CTU ,NPN Epitaxial Silicon TransistorTIP31 Series(TIP31/31A/31B/31C)TIP31 Series(TIP31/31A/31B/31C)Medium Power Linear Switching
TIP31G , Complementary Silicon Plastic Power Transistors
TIP32A ,General Purpose Amplifier and Switching ApplicationsTIP31A/31CTIP32A/32B/32C®COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION ..
TIP32AG , Complementary Silicon Plastic Power Transistors
TIP32ATU ,PNP Epitaxial Silicon TransistorApplications Complement to TIP31/31A/31B/31CTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial ..
TIP32B ,General Purpose Amplifier and Switching ApplicationsTIP31A/31CTIP32A/32B/32C®COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION ..
TLE7259G ,The new LIN Transceiver generation with sleep mode/inhibit outpout, remote and local wake up capabilityFeatures• Transmission rate up to 20 kBaud Compatible to LIN specification 1.2, 1.3 and 2.0 Suppo ..
TLE7263E , Integrated HS-CAN, LIN, LDO and HS Switch System Basis Chip
TLE7263E , Integrated HS-CAN, LIN, LDO and HS Switch System Basis Chip
TLE7269G , Twin LIN Transceiver
TLE7270G , 5-V Low Drop Voltage Regulator
TLE7270G , 5-V Low Drop Voltage Regulator
TIP31CTU
NPN Epitaxial Silicon Transistor
TIP31 Series(TIP31/31A/31B/31C) TIP31 Series(TIP31/31A/31B/31C) Medium Power Linear Switching Applications Complementary to TIP32/32A/32B/32C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : TIP31 40 V CBO : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V V Collector-Emitter Voltage : TIP31 40 V CEO : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 3 A C I Collector Current (Pulse) 5 A CP I Base Current 1 A B P Collector Dissipation (T =25°C) 40 W C C P Collector Dissipation (T =25°C) 2 W C a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : TIP31 I = 30mA, I = 0 40 V C B : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V I Collector Cut-off Current CEO : TIP31/31A V = 30V, I = 0 0.3 mA CE B : TIP31B/31C V = 60V, I = 0 0.3 mA CE B I Collector Cut-off Current CES : TIP31 V = 40V, V = 0 200 μA CE EB : TIP31A V = 60V, V = 0 200 μA CE EB : TIP31B V = 80V, V = 0 200 μA CE EB : TIP31C V = 100V, V = 0 200 μA CE EB I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO EB C h * DC Current Gain V = 4V, I = 1A 25 FE CE C V = 4V, I = 3A 10 50 CE C V (sat) * Collector-Emitter Saturation Voltage I = 3A, I = 375mA 1.2 V CE C B V (sat) * Base-Emitter Saturation Voltage V = 4V, I = 3A 1.8 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 500mA 3.0 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2000 Fairchild Semiconductor International Rev. A, February 2000
