TIP29CTU ,NPN Epitaxial Silicon TransistorApplications• Complementary to TIP30/30A/30B/30CTO-22011.Base 2.Collector 3.EmitterNPN Epitax ..
TIP30A ,Leaded Power Transistor General PurposeTIP29A/29CTIP30A/30C®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPE ..
TIP30A ,Leaded Power Transistor General Purpose
TIP30B ,Leaded Power Transistor General Purpose
TIP30B ,Leaded Power Transistor General Purpose
TIP30B. ,Leaded Power Transistor General Purpose
TLE7183F , 3-Phase Bridge Driver IC
TLE7189F , 3-Phase Bridge Driver IC
TLE7209-2R ,Smart Motorbridges + Driver ICsFunctional DescriptionThe TLE 7209-2R is an intelligent full H-Bridge, designed for the control of ..
TLE7230G ,Smart Octal Low-Side SwitchFeatures Product Summary ♦ Full Protection Supply voltage V 4.5 – 5 ..
TLE7230R ,Smart Octal Low-Side SwitchGeneral description Detailed
TLE7231G , SPIDER - 4 channel low side driver
TIP29CTU
NPN Epitaxial Silicon Transistor
TIP29 Series(TIP29/29A/29B/29C) TIP29 Series(TIP29/29A/29B/29C) Medium Power Linear Switching Applications • Complementary to TIP30/30A/30B/30C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : TIP29 40 V CBO : TIP29A 60 V : TIP29B 80 V : TIP29C 100 V V Collector-Emitter Voltage : TIP29 40 V CEO : TIP29A 60 V : TIP29B 80 V : TIP29C 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 1 A C I Collector Current (Pulse) 3 A CP I Base Current 0.4 A B P Collector Dissipation (T =25°C) 30 W C C Collector Dissipation (T =25°C) 2 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) *Collector-Emitter Sustaining Voltage CEO : TIP29 I = 30mA, I = 0 40 V C B : TIP29A 60 V : TIP29B 80 V : TIP29C 100 V I Collector Cut-off Current CEO : TIP29/29A V = 30V, I = 0 0.3 mA CE B : TIP29B/29C V = 60V, I = 0 0.3 mA CE B I Collector Cut-off Current CES : TIP29 V 200 μA = 40V, V = 0 CE EB : TIP29A V = 60V, V = 0 200 μA CE EB : TIP29B V = 80V, V = 0 200 μA CE EB V : TIP29C = 100V, V = 0 200 μA CE EB I Emitter Cut-off Current V = 5V, I = 0 1.0 mA EBO EB C 40 h *DC Current Gain V = 4V, I = 0.2A FE CE C V = 4V, I = 1A 15 75 CE C V (sat) *Collector-Emitter Saturation Voltage I = 1A, I = 125mA 0.7 V CE C B V (sat) *Base-Emitter Saturation Voltage V = 4V, I = 1A 1.3 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 200mA 3.0 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A1, June 2001
