TIP117TU ,PNP Epitaxial Silicon Darlington TransistorTIP115/116/117TIP115/116/117Monolithic Construction With Built In Base-Emitter Shunt Resistors • Hi ..
TIP120 ,Power Darlingtons for Linear and Switching ApplicationsDarlington - uri-aii8tSilicon NPN PowerTiransistorsTO-220 Package
TIP120 ,Power Darlingtons for Linear and Switching ApplicationsTIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics ..
TIP120 ,Power Darlingtons for Linear and Switching ApplicationsELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
TIP120 ,Power Darlingtons for Linear and Switching ApplicationsTIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics ..
TIP120 ,Power Darlingtons for Linear and Switching Applications
TLE6230GP ,Smart Low Side SwitchesGeneral descriptionOctal Low-Side Switch in Smart Power Technology (SPT) with a Serial Peripheral I ..
TLE6230GP . ,Smart Low Side SwitchesApplications(individually) 1 A• Parallel Inputs High or Low ActiveProgrammable• General Fault Flag• ..
TLE6232GP ,Smart Low Side SwitchesApplications Output current (Channel 1-4) I 2 A D(NOM) • General Fault Flag (Channel 5,6) I 1 A D ..
TLE6232GP ,Smart Low Side SwitchesFeatures Product Summary • Short Circuit Protection up to 24 V • Over-tempera ..
TLE6232GP. ,Smart Low Side SwitchesGeneral description Six Channel Low-Side Switch in Smart Power Technology (SPT) with a Serial Perip ..
TLE6232GP.. ,Smart Low Side SwitchesApplications • Switch for Automotive and Industrial System • Solenoids, Relays and Resistive Loads ..
TIP115TU-TIP117TU
PNP Epitaxial Silicon Darlington Transistor
TIP115/116/117 TIP115/116/117 Monolithic Construction With Built In Base- Emitter Shunt Resistors • High DC Current Gain : h =1000 @ V = -4V, I = -1A (Min.) FE CE C • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP110/111/112 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted Equivalent Circuit C C Symbol Parameter Value Units V Collector-Base Voltage : TIP115 - 60 V CBO : TIP116 - 80 V B : TIP117 - 100 V Collector-Emitter Voltage : TIP115 - 60 V V : TIP116 - 80 V CEO : TIP117 - 100 V R1 V Emitter-Base Voltage - 5 V R2 EBO I Collector Current (DC) - 2 A C E R11 ≅ 0kΩ R20 ≅ .6kΩ I Collector Current (Pulse) -4 A CP I Base Current (DC) - 50 mA B P Collector Dissipation (T =25°C) 2 W C a Collector Dissipation (T =25°C) 50 W C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : TIP115 I = -30mA, I = 0 -60 V C B : TIP116 -80 V : TIP117 -100 V I Collector Cut-off Current CEO : TIP115 V = -30V, I = 0 -2 mA CE B : TIP116 V = -40V, I = 0 -2 mA CE B : TIP117 V = -50V, I = 0 -2 mA CE B I Collector Cut-off Current CBO : TIP115 V = -60V, I = 0 -1 mA CB E : TIP116 V = -80V, I = 0 -1 mA CB E : TIP117 V = -100V, I = 0 -1 mA CB E I Emitter Cut-off Current V = -5V, I = 0 -2 mA EBO BE C h DC Current Gain V = -4V,I = -1A 1000 FE CE C V = -4V, I = -2A 500 CE C V (sat) Collector-Emitter Saturation Voltage I = -2A, I = -8mA -2.5 V CE C B V (on) Base-Emitter ON Voltage V = -4V, I = -2A -2.8 V BE CE C C Output Capacitance V = -10V, I = 0, f = 0.1MHz 200 pF ob CB E ©2001 Rev. A1, June 2001
