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Partno	Mfg	Dc	Qty	Available	Descript
THBT15011D	ST	N/a	2329	avai	TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
THBT20011D	ST	N/a	17340	avai	TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
THBT27011D	ST	N/a	5200	avai	TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE

THBT20011D ,TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINEFEATURESBIDIRECTIONAL CROWBAR PROTECTIONBETWEEN TIP AND GND, RING AND GNDAND BETWEEN TIP AND RING.P ..
THBT20011DRL ,TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINEFEATURESn BIDIRECTIONAL CROWBAR PROTECTIONBETWEEN TIP AND GND, RING AND GNDAND BETWEEN TIP AND RING ..
THBT200S ,TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTIONFEATURESn DUAL BIDIRECTIONAL CROWBAR PROTECTION.n PEAK PULSE CURRENT :-I = 75 A, 10/1000 μs.PPn HOL ..
THBT27011D ,TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINEABSOLUTE MAXIMUM RATINGS (T =25°C)ambSymbol Parameter Value UnitI Peak pulse current (see note 1) 1 ..
THC63LVD1024 , 135MHz 67Bits LVDS Receiver
THC63LVD104 , 90MHz 30Bits COLOR LVDS Receiver
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TLC27L9CD ,Quad Precision Single Supply Micropower Operational Amplifier TLC27L4, TLC27L4A, TLC27L4B, TLC27L4Y, TLC27L9 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS SLOS ..
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TLC27L9CDRG4 ,Quad Precision Single Supply Micropower Operational Amplifier 14-SOIC 0 to 70 TLC27L4, TLC27L4A, TLC27L4B, TLC27L4Y, TLC27L9 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS SLOS ..
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TLC27L9ID ,Quad Precision Single Supply Micropower Operational Amplifier TLC27L4, TLC27L4A, TLC27L4B, TLC27L4Y, TLC27L9 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS SLOS ..

THBT15011D-THBT20011D-THBT27011D
TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
Application Specific Discretes
A.S.D.
THBTxxx11D
BIDIRECTIONAL CROWBAR PROTECTION
BETWEEN TIP AND GND, RING AND GND
AND BETWEENTIP AND RING.
PEAK PULSE CURRENT:
IPP= 30Afor 10/1000μs surge.
HOLDING CURRENT:= 150mA.
AVAILABLEIN SO8 PACKAGES.
LOW DYNAMIC BREAKOVER VOLTAGE.
FEATURES
SO8
Dedicated to telecommunication equipment
protection, these devices provide a triple
bidirectionalprotection function.
They ensure the same protection capability with
the same breakdown voltage bothin longitudinal
mode and transversalmode. particularattention has been givento theinternal
wire bonding. The ”4-point” configuration ensures reliable protection, eliminating overvoltages
introduced by the parasitic inductancesof the
wiring (Ldi/dt), especially for very fast transient
overvoltages.
Dynamic characteristics have been defined for
several typesof surges,in orderto meet the SLIC
maximumratings.
DESCRIPTION
SCHEMATIC DIAGRAM
TRIPOLAR OVERVOLTAGE
PROTECTION FOR TELECOM LINE
September 1998- Ed:5A
CCITT K20: 10/700μs 1.5kV
5/310μs 20A(*)
VDE 0433: 10/700μs 2kV
5/310μs 20A(*)
VDE 0878: 1.2/50μs 1.5kV
1/20μs 20A(*)
CNET: 0.5/700μs 1.5kV
0.2/310μs 20A(*)
FCC part68: 2/10μs 2.5kV
2/10μs 40A(*)
BELLCORE
TR-NWT-001089: 2/10μs 2.5kV
2/10μs 40A(*)
(*) With seriesresistors orPTC.
COMPLIESWITHTHE FOLLOWINGSTANDARDS:GNDGNDTIPRING GND GND TIP RING
TM: ASDis trademarksof SGS-THOMSON Microelectronics.
1/9
Symbol Parameter Value Unit
IPP Peak pulse current (seenote1) 10/1000 μs30 A
ITSM Non repetitivesurge peak on-state current
(F=50Hz)=10 ms1s
Tstg
Storage temperaturerange
Maximum operating junction temperature40to+ 150 150 °C°C Maximum leadtemperature forsoldering during 10s 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb =25°C)
Note1: Pulse waveform:
10/1000μstr=10μstp=1000μs
100PP tr p t
TEST CIRCUITSFORIPP
Longitudinal mode
THBT
See test
circuit3P
TIP
RING
GND
IPP/2PIPP/2
Transversal mode
TIPor
RING
GND
THBTPIPP
See test
circuit3
Symbol Parameter Value Unit
Rth (j-a) Junctionto ambient 170 °C/W
THERMAL RESISTANCES
THBTxxx11D
2/9
IBORMVBR BOVII
Symbol Parameter
VRM Stand-offvoltage
IRM Leakagecurrentat stand-off voltage ContinuousReverse voltage
VBR Breakdownvoltage
VBO Breakovervoltage Holding current
IBO Breakovercurrent Forward voltage drop
IPP Peak pulse current Capacitance
ELECTRICAL CHARACTERISTICS (Tamb =25°C)
Type IRM @VRM IR @VR VBO @IBO IH C
max. max.
note1
max.
note2
min. max. min
note3
max
note4
μAV μA V V mAmAmA pF
THBT15011D 5 135 50 150 210 50 400 150 80
THBT16011D 5 135 50 160 230 50 400 150 80
THBT20011D 5 180 50 200 290 50 400 150 80
THBT27011D 5 240 50 270 380 50 400 150 80
Note1: IR mesuaredatVR guaranteesVBR >VR
Note2: Measuredat 50Hz(1 cycle)test circuit1.
Note3: See thereferencetest circuit2.
Note4: VR= 1V,F= 1MHz.
STATIC PARAMETERS
Type Symbol Test conditions (see note5) Maximum Unit
THBT15011D VBO 10/700μs 1.5kV Rp=10Ω IPP=30A
1.2/50μs 1.5kV Rp=10Ω IPP=30A
2/10μs 2.5kV Rp=62Ω IPP=38A
THBT16011D VBO 10/700μs 1.5kV Rp=10Ω IPP=30A
1.2/50μs 1.5kV Rp=10Ω IPP=30A
2/10μs 2.5kV Rp=62Ω IPP=38A
THBT20011D VBO 10/700μs 1.5kV Rp=10Ω IPP=30A
1.2/50μs 1.5kV Rp=10Ω IPP=30A
2/10μs 2.5kV Rp=62Ω IPP=38A
THBT27011D VBO 10/700μs 1.5kV Rp=10Ω IPP=30A
1.2/50μs 1.5kV Rp=10Ω IPP=30A
2/10μs 2.5kV Rp=62Ω IPP=38A
Note5: See testcircuit3forVBO dynamic parameters;Rp istheprotectionresistor locatedon theline card.
DYNAMIC BREAKOVER VOLTAGES (Transversalmode)
THBTxxx11D
3/9
TEST CIRCUIT1 for IBO and VBO parameters:
static
relay.
D.U.T VBO
measureI BO
measure= 20ms
Transformer
220V/800V
Auto
Transformer
220V/2A out
TEST PROCEDURE:
Pulse Test duration(tp= 20ms): For Bidirectional devices= SwitchKis closed For Unidirectionaldevices= SwitchKis open.
VOUTSelection Device with VBO< 200 Volt
-VOUT= 250VRMS,R1= 140Ω. Devicewith VBO ≥ 200 Volt -VOUT= 480 VRMS,R2= 240Ω.
TEST CIRCUIT2 forIH parameter.PBAT=- 48V
Surge generator
D.U.T.
Thisisa GO-NOGO test which allowsto confirm the holdingcurrent (IH) levelina functional
test circuit.
TEST PROCEDURE: Adjust the currentlevelat theIH valueby shortcircuiting the AKof the D.U.T. Fire the D.U.T witha surgeCurrent: Ipp= 10A, 10/1000 μs. The D.U.T will come back off-state within50 ms max.
THBTxxx11D
4/9
Pulse(μs) Vp C1 C2 LR1 R2 R3 R4 IPP Rp tp (V) (μF) (nF) (μH) (Ω)(Ω)(Ω)(Ω) (A) (Ω) 700 1500 20 200 0 50 15 25 25 30 10
1.2 50 1500 1 33 0 76 13 25 25 30 10 10 2500 10 0 1.1 1.3 0 3 3 38 62
TEST CIRCUIT3 for IPP and VBO parameters:
TIP
RING
GNDis definedinno load condition)P
THBTxxx11D
5/9
APPLICATION NOTE
TIP
GND
RING
TIP
GND
RING Connectpins2,3,6 and7to Groundin
orderto guaranteea good surge current
capabilityfor long duration disturbances. In orderto take advantageof the”4-point”
structureof the THBT, the TIP and RING
lines haveto crossthe device.In this case,
the devicewill eliminate the overvoltages
generatedby the parasiticinductancesof
the wiring (Ldi/dt), especiallyfor very fast
transients.
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 (A)TSM
F=50Hz
Tjinitial=25°C
t(s)
Fig.1: Surge peak current versus overload dura-
tion.
THBTxxx11D
6/9

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